国家/地区 美国（8）
IPC部 H（8） C（4） B（3）
IPC大类 H01（6） B32（2） B82（2）
C01（2） H05（2）
IPC小类 H01M（3） B32B（2） B82Y（2）
C01B（2） H01L（2）
IPC H01M004/04（2） H01M004/1393（2） H01M004/36（2）
H01M004/505（2） H01M004/62（2） H01M010/0525（2）
发明人 CHEN K（8）
公开年 2021（2）
申请年 2021（2） 
专利权人 UNIV NORTHWE.（2）

Circuit board structure, has dielectric layer provided on circuit layer, and build-up circuit layer exposing non-conductive seed layer region and electrically connected to pads through conductive via and conductive seed layer region.

CHEN K, KUO C, CHEN G, GUO J

Method of using graphene-cellulosic polymer composition to modulate cathode performance of lithium-ion battery used in e.g. electric vehicles, involves contacting exfoliated composition with lithium manganese oxide nanoparticles composition.

SECOR E B, CHEN K, HERSAM M C

Electroconductive polymer composition used in electronics packaging, comprises electroconductive metal filler material comprising metal particle(s) having aspect ratio, carbon-based filler material having aspect ratio, and polymer matrix.

CHEN K, TAUBERT C J, VOGT B D, ZHU Y

Composite comprises few-layered graphene comprising mono-, bi- and n-layered graphene and nanoparticles of material comprising lithium-ion cathode active materials for lithium-ion battery or lithium-ion anode active materials.

HERSAM M C, CHEN K, SECOR E B

Graphene thin film of thermoelectric device, has sheet layers and connecting portions that form continuous graphene thin film structure, and connecting portions that are provided with graphene of monolayer of carbon atoms.

CHEN K, LIN M, JU S, HSIEH Y, CHEN K Y, LIN M C, JU S P, HSIEH Y P

Modifying a surface of nano-particle powder e.g. silicon powder used in graphene-contained composite involves providing polar aprotic solvent; and mixing the solvent with powder so that the solvent adheres to the surface of powder.

HWANG B J, CHEN L, CHEN K, WONG D P, TSENG H, HWANG B, LIN L, CHEN L C, CHEN K H, TSENG H P

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L