国家/地区 中国（6）
IPC部 H（5） G（2）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC
发明人 CHEN S（6）
公开年 2015（2） 2016（2）
申请年 2015（4） 
专利权人 SHANGHAI INTEGRATED CIRCUIT RES DEV CE（6）

Air gap graphene field effect transistor structure, has channel whose surfaces are covered with air or vacuum contact, and gate electrode overlapped with source electrode and drain electrode, where channel is provided with air gap.

KANG X, CHEN S, ZHONG X, SHEN R

Composite channel transistor, has passivation layer covering periphery and upper surface of composite channel layer which is a laminate comprised of layer of graphene and organic film.

ZHONG M, CHEN S

High sensitivity UV light detector, has semiconductor substrate formed with graphene channel that is formed with gate oxide layer, and graphene channel provided with organic thin film, coupling source electrode and leakage electrode.

CHEN S, HU S, SHANG E

Graphene organic thin-film composite structure light trigger nonvalatile storage device, has doped organic thin film connected with two sides of power source pole, and grid electrode and source drain electrode connected with erasing circuit.

CHEN S, HU S, SHANG E

Method for detecting microRNA using graphene-based sensor, involves preparing graphene channel field-effect transistor, as graphene sensor, and bonding probe DNA combined microRNA functional group to modified surface of graphene.

CHEN S, HU S, SHE S

Graphene FET manufacturing method, involves forming semiconductor substrate with alignment mark unit, strip-shaped graphite module provided with electric conduction channel, and completing wet etching process.

CHEN S, HU S, SHE S