国家/地区 韩国（21） 美国（6） 世界知识产权组织（4） 中国（3）
IPC部 C（13） B（8） H（8）
IPC大类 C01（10） H01（8） C23（4）
B01（3） B41（2） B82（2）
C08（2）
IPC小类 C01B（10） H01L（6） C23C（4）
B01J（3） B41M（2） B82B（2）
C08J（2） H01B（2）
IPC C01B031/02（9） B01J019/18（2） B41M005/10（2）
B82B003/00（2） C01B031/04（2） C23C016/26（2）
H01B013/00（2） H01L051/50（2）
发明人 CHOI M（22）
公开年 2014（10） 2015（4） 2022（4） 2016（2）
申请年 2013（9）  2014（6）  2021（4） 
专利权人 LG ELECTRONI.（14） UNIV SEOUL N.（3）

Two-dimensional microporous graphene for e.g. energy storage materials e.g. electrode active materials, electronic materials e.g. quantum dots, and membranes or films e.g. separator and chemical detector, has preset average pore size, interpore spacing, and standard deviation of interpore spacing.

KIM C, CHOI M, KI C M, KIM C H

Composition useful in kit for detecting and diagnosing corona-19 virus infection by detecting nucleic acid, comprises primer complementary to target nucleic acid, and fluorescent morpholine naphthalimide deoxyuridine nucleotides.

SEO Y, CHOI M

Manufacture of fabric involves preparing graphene oxide, trans-esterifying functional group of fiber and graphene oxide to form fiber coating with graphene oxide, washing, forming adhesive layer, preparing stretched porous ePTFE film, attaching film to adhesive layer to prepare fabric.

JEONG G, KIM S B, LEE J Y, CHOI M, AHN L, LEE H M, KANG Y, LEE Y, YANG S, HAN J M

PH change sensing fiber for pH change sensor comprises working electrode comprising conductive filler and pH-sensitive filler in polymer matrix, and reference electrode including metal wire in metal salt/polymer complex.

KOO H J, KIM S Y, KIM J H, CHOI M Y, JUN K H, KIM J, CHOI M

Semiconductor comprises tungsten oxyselenide (TOS) p-type dopant, where TOS is formed by introducing layer of TOS to semiconductor, and oxidizing layer of WSe to produce TOS layer.

BORAH A, JUNG Y, CHOI M, NIPANE A B, TEHERANI J T, HONE J

Method for producing metal chalcogenide thin film on flexible substrate, involves supplying transition metal precursor and chalcogen-containing gas onto graphene formed on substrate, so as to form metal chalcogenide thin film.

CHOI M, LEE C, KIM Y

Method for transferring graphene for use in electronic device, involves arranging graphene layer on substrate, and performing thermal processing processes about substrate.

KIM D, CHOI M, PARK I

Manufacturing graphene-metal chalcogenide hybrid film involves forming the metallic foil on the graphene layer, and then supplying the chalcogen containing gas on the metallic foil.

CHOI M

Corrosion-resistant coated structure used for manufacturing refrigerant pipe, comprises coating layer formed by applying graphene oxide dispersion of resin on metal surface.

CHOI M

Graphene film comprises substrate, graphene layer provided on substrate, and charge transport layer comprising nanowires provided between substrate and graphene layer.

MOON J, HONG B, PARK S, JUNG M, CHOI M