国家/地区 韩国（10） 中国（3） 美国（3）
IPC部 C（7） B（5） H（4）
IPC大类 C01（7） H01（4） B01（3）
B41（2） C23（2）
IPC小类 C01B（7） B01J（3） H01L（3）
B41M（2） C23C（2）
IPC C01B031/02（7） B01J019/18（2） B41M005/10（2）
C01B031/04（2） H01L051/50（2）
发明人 CHOI M（10）
公开年 2014（10）
申请年 2013（7）  2014（3） 
专利权人 LG ELECTRONI.（10）

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Organic electroluminescent device display for use in light emitting device, has getter positioned inside sealing cap and comprising graphene layer.

JUNG M, CHOI M, KIM T, MOON J, KIM T H

Doping of graphene used for preparing doped graphene, involves forming dopant using graphene flakes, and doping graphene using dopant.

CHOI M, KIM T, MOON J, JUNG M

Producing patterned graphene used in touch panel, comprises etching graphene using an ink pattern, drying the ink pattern, forming the ink pattern including a conductive material or dopant on graphene, and forming graphene on a substrate.

JUNG M, CHOI M, KIM T, MOON J

Producing doped graphene, comprises forming a carbon donor layer including a dopant on a substrate, forming a protective layer on the carbon donor layer, and heating the carbon donor layer.

CHOI M, KIM T, MOON J, JUNG M

Device useful for producing graphene, comprises a chamber loaded with catalytic metal, having gas inlet and outlet, and a thermal expansion compensating unit to compensate difference of thermal expansion of graphene and catalytic metal.

MOON J, KIM T, CHOI M, JUNG M

Apparatus useful for manufacturing graphene, comprises source decomposition unit to decompose carbon source set on one side of a forming chamber, and a feeding unit to supply catalyst metal via source decomposition unit and forming chamber.

MOON J, KIM T, CHOI M, JUNG M

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Thin film silicon solar cell manufacturing method, involves forming polycrystalline silicon on graphene by utilizing thin film structure, where amorphous silicon is heat-treated on graphene that is formed on metallic board.

RHO J, CHOI M, KIM T

Manufacturing method of silicon semiconductor element for organic LED, involves producing device structure using the polycrystalline silicon which is formed on graphene.

RHO J, CHOI M, KIM T