国家/地区 韩国（8） 美国（6） 中国（4） 日本（3）
IPC部 H（8） B（4）
IPC大类 H01（8） B82（3）
IPC小类 H01L（8） B82Y（3）
IPC H01L021/336（5） H01L029/78（5） B82Y099/00（3）
H01L029/06（3） H01L029/16（3） H01L029/772（3）
H01L029/786（3） B82Y010/00（2） H01L021/28（2）
H01L029/08（2） H01L029/417（2） H01L031/00（2）
H01L033/04（2） H01L033/22（2） H01L051/05（2）
发明人 CHUNG H J（8）
公开年 2013（8）
申请年 2011（3）  2012（3）  2013（2） 
专利权人 SAMSUNG ELEC.（8）

UV light-emitting diode comprises n-type semiconductor layer, active layer on n-type semiconductor layer, p-type semiconductor layer of aluminum gallium nitride on active layer, and p-type graphene layer on p-type semiconductor layer.

HWANG S, KO G, SIM S, KIM J, CHUNG H, SONE C, HYEON S S, JAE J H, SEOP K J, SU S C, WON H S, U KOH G, JEONG H, KO K, SHIM S, SON C, HWANG S W, KO G W, SIM S H, KIM J S, CHUNG H J, SONE C S

Three-dimensional zero gap semiconductor graphene switching device, has graphene layer surrounding end portion of semiconductor layer, and gate insulation layer surrounding graphene layer, where gate surrounds insulation layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, YANG H, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, YANG H J, CHUNG H J

Graphene transistor for use as radio frequency transistor in hybrid transistor, has cover covering upper surface of source electrode and drain electrode and forming air gap above graphene channel between source electrode and drain electrode.

CHUNG H, CHUNG U, KIM K, CHUNG H J, JOUNG W I, KIM K N, CHUNG U I, JUNG W, JUNG H, KIM G

Light emitting device package has graphene layer that transmits light emitted from active layer so that surface plasmon resonance is increased in interface between metal particle surface layer and graphene layer.

HWANG S W, KO G W, SIM S H, CHUNG H J, SONE C S

Electrode structure for semiconductor device e.g. FET used in electronic device, has graphene layer that is configured to contact one of semiconductor layer and electrode containing metal.

YANG H, PARK S, CHUNG H, HEO J, YANG H J, PARK S J, CHUNG H J, HEO J S, HUH J, JUNG H

Quantum dot light emitting device has boron nitride layer which is provided between n-type graphene layer and p-type graphene layer.

HO Y G, HYEON S S, JAE J H, SU S C, WON H S, U KOH G, HWANG S W, YOO K H, KO G W, SIM S H, CHUNG H J, SONE C S

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Method for transferring graphene, involves forming trench on substrate, arranging graphene layer using additive liquid on substrate, pressurizing graphene layer on substrate, and removing additive liquid from substrate by drying.

SEOK S H, SEONG H J, JONG J H, JUN Y H, JUN P S, JAE S H, SEO D, HEO J, CHUNG H, YANG H, PARK S, SONG H, HEO J S, CHUNG H J, YANG H J, PARK S J, SONG H J