国家/地区 中国（7） 世界知识产权组织（2）
IPC部 C（5） B（2）
IPC大类 C01（4） C23（2） C30（2）
IPC小类 C01B（4） C23C（2） C30B（2）
IPC C01B031/04（4） C23C016/26（2）
发明人 DI Z（7）
公开年 2012（4） 2013（3）
申请年 2012（7）
专利权人 CHINESE ACAD.（6） SHANGHAI INS.（2）

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Controllable industrial graphene metal nano-meter structure array preparation method, involves forming platform frame with groove, and reducing temperature of segregation carbon metal solid solution for complete graphene preparation process.

CHEN L, DI Z, WANG G, WANG X, WEI X, ZHANG M

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Graphene preparation includes depositing catalysis metal layer on substrate, implanting carbon ion in catalysis metal layer to form carbon atom saturated plane, and putting substrate in heating vacuum tube.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y