国家/地区 中国（12） 世界知识产权组织（3）
IPC部 C（10）
IPC大类 C01（8） C23（4） C30（3）
IPC小类 C01B（8） C23C（4） C30B（3）
IPC C01B031/04（7） C23C016/26（4）
发明人 DING G（12）
公开年 2012（8） 2013（4）
申请年 2012（12）
专利权人 CHINESE ACAD.（11） SHANGHAI INS.（7） CHINESE ACAD.（2）

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Preparation of graphene nanopore array involves coating carbon solution on surface of porous anodic aluminum oxide template, pressing porous anodic aluminum oxide template on substrate surface, peeling template, and annealing metal base.

DING G, JIANG M, XIE X

Graphene preparation involves adding halobenzene in organic solvent in presence of catalyst to form graphene suspension, filtering suspension to obtain graphene oxide and catalyst, adding graphene oxide with acid, and filtering.

DING G, JIANG M, LI X, SUN J, WU T, XIE X

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y

Preparation of graphene oxide/sulfide composite electrode material by dissolving graphite oxide with deionized water, ultrasonically peeling off, adding dimethylformamide, acid salt and water reducing agent, centrifuging, and drying.

DING G, DU F, JIANG M, XIE X

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Graphene preparation includes depositing catalysis metal layer on substrate, implanting carbon ion in catalysis metal layer to form carbon atom saturated plane, and putting substrate in heating vacuum tube.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Graphene-modified platinum electrode for detection of trace amount of heavy metal, is obtained by depositing metal platinum electrode on silicon dioxide substrate and growing graphene on platinum electrode.

DING G, JIN Q, TANG F, XIE X, ZHANG F, ZHANG H, ZHAO J