国家/地区 美国（5）
IPC部 H（4） B（3）
IPC大类 H01（4） B32（2） B82（2）
IPC小类 H01L（4） B32B（2） B82Y（2）
IPC B32B009/00（2） H01L021/04（2） H01L029/66（2）
发明人 GRILL A（5）
公开年 2012（4）
申请年 2010（5）
专利权人 INT BUSINESS.（5）

Forming a graphene layer on a sapphire substrate involves forming single crystalline semiconductor-carbon alloy layer on sapphire substrate; and forming graphene layer directly on single crystalline semiconductor-carbon alloy layer.

CHU J O, DIMITRAKOPOULOS C D, FREITAG M O, GRILL A, MCARDLE T J, WISNIEFF R L

Structure for use in semiconductor device i.e. FET, of integrated circuit of e.g. cellular phone, has nanoribbon-containing layer settled on upper surface of substrate, where layer includes alternating graphene nanoribbons.

COHEN G, DIMITRAKOPOULOS C D, GRILL A, WISNIEFF R L

Forming structure containing graphene layer involves forming semiconductor islands on surface of single crystalline semiconductor-carbon alloy layer, and annealing the layer, where layer surface becomes vicinal surface.

DIMITRAKOPOULOS C D, FREITAG M O, GRILL A, WISNIEFF R L

Formation of graphene layer used for structure, involves forming graphene layer directly on a crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L

Method for forming graphene layer e.g. few-layer graphene, for high frequency low-noise amplifier for communication application, involves using carbon in layer to pass via another layer to upper surface and forming graphene layer on surface.

BOL A A, CARRUTHERS R A, CHU J O, GRILL A, LAVOIE C, SAENGER K L, TSANG J C