国家/地区 中国（10）
IPC部 B（8） C（7）
IPC大类 B01（7） C25（3） C01（2）
IPC小类 B01J（7） C25B（3） C01B（2）
IPC B01J027/057（3） C25B001/04（3） C25B011/06（3）
B01J023/10（2） B01J035/06（2）
发明人 HE H（10）
公开年 2017（5） 2020（3） 2019（2）
申请年 2017（3）  2019（3）  2016（2）  2020（2） 
专利权人 UNIV SHAANXI SCI TECHNOLOGY（10）

Preparing metal structure molybdenum diselenide/redox graphene composite powder involves hydrothermally heating aqueous solution containing selenium ions, ammonium paramolybdate, citric acid, and graphene oxide for reaction.

HE H, HE Z, SHEN Q

High-efficiency silicon-molybdenum co-doped titanium dioxide/redox graphene composite self-cleaning film comprises molybdenum, silicon dioxide and graphene oxide.

HE H

Preparation of semi-metal structure tungsten ditelluride/redox graphene composite powder involves subjecting aqueous solution containing tellurium ion, ammonium paratungstate, citric acid and graphene oxide to hydrothermal reaction.

HE H, HE Z, SHEN Q

Preparing sheet-shaped half-metal molybdenum (IV) telluride:copper, and molybdenum (IV) telluride:copper/reduced graphene oxide comprises e.g. adding tellurium powder, and potassium borohydride to deionized water, reacting, and dissolving.

HE H, HE Z, SHEN Q

Preparation of metal-structured tungsten-selenide-redox graphene composite structure includes preparing precursor aqueous solution of tungsten diselenide film, performing hydro-thermal treatment, filtering, washing and drying.

HE H, HE Z, SHEN Q

-Aluminum doped copper sulfide/graphene composite film comprises copper sulfide/rGO composite film formed by co-deposition of copper sulfide, rGO and aluminum ion, where copper sulfide is crystal grain, rGO is reduced graphene.

HE H, HE Z, SHEN Q

Preparing single-layer metal structure/graphene composite used for electrocatalytic and photocatalytic production of hydrogen, involves producing molybdenum disulfide precusor aqueous solution, and adding oxidized graphene aqueous solution.

HE H, HE Z, SHEN Q

Silicon-yttrium-co-doped titanium dioxide/graphene oxide composite self-cleaning film comprises yttrium, silicon, and graphene oxide whose amounts are relative to titanium dioxide and silicon dioxide.

HE H, HE Z, SHEN Q

Preparation of bismuth-doped tin selenide/redox graphene composite film, involves adding tin ion aqueous solution and selenide ion aqueous solution in vessel containing cleaned substrate, and finishing film deposition.

HE H, HE Z, SHEN Q

Preparing neodymium-doped oxidized graphene/titanium dioxide composite self-cleaning film involves adding tetrabutyl titanate and aqueous neodymium nitrate solution to solvent, and then stirring mixture to obtain precursor solution.

HE H, HE Z, SHEN Q