国家/地区 中国（9） 世界知识产权组织（4） 美国（2）
IPC部 C（7） H（3） B（2）
IPC大类 C01（6） C23（5） H01（3）
B82（2） C30（2）
IPC小类 C01B（6） C23C（5） B82Y（2）
C30B（2） H01L（2）
IPC C01B031/04（5） C23C016/26（4） C23C016/02（3）
B82Y040/00（2）
发明人 JIANG M（9）
公开年 2012（9）
申请年 2012（5）  2011（3） 
专利权人 CHINESE ACAD.（6） SHANGHAI INS.（5） CHINESE ACAD.（2）

Preparation of graphene oxide/sulfide composite electrode material by dissolving graphite oxide with deionized water, ultrasonically peeling off, adding dimethylformamide, acid salt and water reducing agent, centrifuging, and drying.

DING G, DU F, JIANG M, XIE X

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y

Manufacturing method of transparent conductive layer, involves etching graphene layer to form grid pattern.

CHEN J, HU G, JIANG M, LIAO J, LIN Y, QIU B

Method of manufacturing thin film solar battery, involves forming back metal electrode on graphene transition layer which is formed on thin film battery layer of substrate.

LIU Z, JIANG M, GU Q, YANG P, NIU X

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Method for gradually thinning graphene to obtain graphene nano structure, involves removing top layer of multilayer graphene by anisotropy oxidation process, annealing and processing multi-plasma treatment and high temperature annealing.

DING G, JIANG M, XIE X, YANG X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X