国家/地区 韩国（9）
IPC部 C（9） B（5） H（2）
IPC大类 C01（9） B01（4） C23（3）
H01（2）
IPC小类 C01B（9） B01J（4） C23C（3）
H01L（2）
IPC C01B031/02（9） B01J019/08（4） C23C016/26（2）
发明人 JUNG M（9）
公开年 2013（9）
申请年 2012（8） 
专利权人 LG ELECTRONI.（9）

MManufacturing three-dimensional structure of graphene useful in flexible display, comprises preparing mold, forming graphene layer on mold, forming support structure for covering first and second sides on graphene layer, and removing mold.

LEE S, BYUN N, JUNG M, LEE D, SEO B

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Device, useful for producing graphene, comprises a current supply unit for supplying current to a formation area through a contact unit, and a storage unit that receives metal catalyst in roll state, where contact unit contacts chamber.

RHO J, PARK W, JUNG M, SEO B, MOON J

Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.

RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W

Method for doping graphene layer for doped graphene film, involves forming catalytic metal layer on graphene layer, placing dopants on substrate, removing metal layer, providing graphene layer on substrate, and removing support layer.

JUNG M, RHO J, SEO B, MOON J

Method for patterned graphene layer involves forming catalytic metal layer on graphene layer, placing patterned film on substrate, removing catalytic metal layer, providing graphene layer on substrate, and removing support layer.

JUNG M, RHO J, SEO B, MOON J