国家/地区 韩国（6） 美国（4）
IPC部 H（6） B（2）
IPC大类 H01（6） B82（2）
IPC小类 H01L（5） B82B（2）
IPC B82B003/00（2） H01L021/20（2） H01L021/336（2）
H01L029/06（2） H01L029/78（2） H01L029/786（2）
发明人 KIM D C（6）
公开年 2009（3） 2011（2）
申请年 2007（3）  2010（2） 
专利权人 SAMSUNG ELEC.（6）

Graphene device e.g. graphene-based inverter has electrodes and graphene channel which are formed on upper oxide layer formed on embedded gate.

HEO J S, SEO S, KIM D, WOO Y, CHUNG H, JEONG H J, KIM T C, SEO S A, U Y S, CHUNG H J, KIM D C, WOO Y S, HEO J

Fixing graphene using a laser beam for manufacturing an electronic device, comprises fixing a defect in a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon, and determining the defect of the nanoribbon.

SEO S, KIM D, WOO Y, CHUNG H, HEO J, SEO S A, KIM D C, WOO Y S, CHUNG H J, HEO J S

Stack structure useful in electronic device comprises silicon substrate, under layer formed on the silicon substrate, epitaxial graphene layer formed on under layer, nickel layer and copper layer between silicon substrate and nickel layer.

CHUNG H, JEON D, KIM D, SEO S, WOO Y, CHUNG H J, JEON D Y, KIM D C, SEO S A, WOO Y S

Electromechanical switch has elastic conductive layer made of several layers of graphene, which is bent by application of electric field.

CHUNG H, JUNG R, KIM D, LEE C, SEO S, CHUNG H J, JUNG R J, KIM D C, LEE C W, SEO S A

Graphene utilization type LED, has gate electrode placed in light emission region, and insulating layer isolating electrode from light-emitting layer, where width of drain region in LED is broad from area-source in direction to drain region.

CHUNG H J, JUNG R J, KIM D C, LEE C W, SEO S A

Charge detector using graphene, has area source and drain region which are respectively formed in sides of charged couple device (CCD) providing with barriers.

CHUNG H J, JUNG R J, KIM D C, LEE C W, SEO S A