国家/地区 美国（9） 韩国（7） 中国（5）
IPC部 H（10） B（8） C（7）
G（2）
IPC大类 H01（10） B82（4） C01（4）
B32（3） B01（2） H05（2）
IPC小类 H01L（9） B82Y（4） C01B（4）
B32B（3） H05K（2）
IPC H01L021/02（3） H01L029/16（3） B82Y010/00（2）
B82Y040/00（2） B82Y099/00（2） C01B031/02（2）
C01B031/04（2） H01L021/027（2） H01L021/683（2）
H01L033/00（2）
发明人 KIM J（12）
公开年 2013（6） 2014（4） 2015（2）
申请年 2013（12）
专利权人 INT BUSINESS.（3） SAMSUNG ELEC.（2）

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Manufacturing graphene-ionic liquid composites for electrode materials of supercapacitors, by dispersing graphite oxide composites and ionic liquid-composites into solvent, adding sodium borohydride, and then applying thermal energy.

KANG K, KIM J, KIM K M, KIM S, LEE Y G, SHIN D O

Solid-state device structure for separating and isolating graphene monolayer, has single crystalline monolayer of graphene that is arranged on substrate by single transfer process and has surface area of greater than specific inches.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Method for transferring graphene to wafer in semiconductor device for microelectronics application, involves exfoliating closest monolayer by mechanically splitting spreading layer in which closest monolayer remains on stressor layer.

BEDELL S W, DIMITRAKOPOULOS C D, FOGEL K E, HANNON J B, KIM J, PARK H, PFEIFFER D, SADANA D K, SALDANHA D K, PARK H S

Method for forming graphene pattern, involves placing mask having predetermined pattern above graphene thin film layer that is patterned through photolithography process.

KANG S, JEON B, KIM J

Nuclear boiling heat transfer system, has base graphene multi-layered structure layer whose upper part is formed with multiple bubbles by supplying nuclear boiling heat to surface of base graphene multi-layered structure layer.

KIM M H, AHN H S, KIM J

Manufacture of graphene quantum dot involves forming carbon source beams by injecting carbon sources into thermal plasma jet, thermally decomposing carbon source, and flowing carbon source beams into tube connected to anode.

SUH J S, KIM J H, KIM J, LEE M W

Transparent electrode for electronic material has graphene oxide layer formed on and/or under first electrode layer that is formed on glass substrate.

KIM W C, KIM J I, HUR K H, KANG H H, KIM W, KIM J, HUR K, CHEON K U, IL K J, HEON H G, WOON C K, JAE I K

Method of forming graphene oxide based layer used for manufacturing article, involves preparing solution of graphene oxide and solution of nanostructures, and applying solutions onto surface of substrate.

HUANG J, KIM J, TUNG V C

UV light-emitting diode comprises n-type semiconductor layer, active layer on n-type semiconductor layer, p-type semiconductor layer of aluminum gallium nitride on active layer, and p-type graphene layer on p-type semiconductor layer.

HWANG S, KO G, SIM S, KIM J, CHUNG H, SONE C, HYEON S S, JAE J H, SEOP K J, SU S C, WON H S, U KOH G, JEONG H, KO K, SHIM S, SON C, HWANG S W, KO G W, SIM S H, KIM J S, CHUNG H J, SONE C S