国家/地区 韩国（6）
IPC部 H（5） C（2）
IPC大类 H01（5） C01（2）
IPC小类 H01L（5） C01B（2）
IPC H01L033/04（3） C01B031/02（2） H01L051/52（2）
发明人 KIM J S（6）
公开年 2012（5）
申请年 2010（6）
专利权人 SAMSUNG LED .（4）

Manufacture of graphene involves preparing mixed solution of graphite powder, saccharide and oxidizing agent, centrifuging obtained solution, extracting, and heating.

OH W T, KIM J S, KOO M S, KIM D H

Quantum dot light emitting device e.g. LED used in display for lighting, has graphene quantum dot that is fixed on electron-transport layer and hole-transport layer is arranged above light-emitting layer.

HWANG S W, KIM J S, CHUNG H J, CHA N G, SONE C S

Graphene light emitting device, has multi-layer structure equipped with graphene that is prepared on substrate, insulating layer prepared on quantum dots that are formed on grapheme, and N type electrode prepared on substrate.

KIM J S, HWANG S W, CHA N G, PARK S E, SUNG Y K, SONE C S

Quantum dot light emitting device comprises substrate, graphene layer and luminous unit which comprises quantum dot light-emitting layer, where buffer layer is prepared on graphene layer.

HWANG S W, CHUNG H J, KIM J S, PARK T Y, SONE C S

Graphene photonic crystal light emitting device, has graphene layer formed among conductive semiconductor layers and active layer, where one of conductive semiconductor layers is arranged on substrate.

HWANG S W, CHUNG H J, KIM J S, SONE C S

Cross-type graphene hetero-junction structure is formed by attaching primary graphene on substrate, coating polymethyl methacrylate to graphene, baking, separating polymethyl methacrylate layer, and aligning layer on secondary graphene.

LEE S W, KIM J S