国家/地区 韩国（8） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 美国（2） 世界知识产权组织（2）
IPC部 C（6） G（4） H（2）
IPC大类 C01（5） G03（3） H01（2）
IPC小类 C01B（4） G03F（3） H01M（2）
IPC G03F001/62（3） C01B032/184（2） H01M004/02（2）
H01M004/36（2） H01M004/62（2） H01M010/052（2）
H01M010/0525（2）
发明人 KIM K S（8）
公开年 2022（6） 2023（2）
申请年 2022（8）
专利权人 GRAPHENELAB .（3） SAMSUNG SDI .（2）

Composite active material for forming anode, comprises core comprising silicon-containing structure and/or silicon-containing compound, and shell comprising carbonaceous material, and at least one metal oxide arranged in matrix of carbonaceous material, arranged on and conformed to surface of core.

SHIM K, MAH S, SON I, JO S, KIM G, PARK J, KAPYLOU A, LEE J, EUN S K, MAH S K, JO S N, KIM G S, WAN L J, SHIM K E, MA X G, SON I H, KIM K S, PARK J H, LEE J W, LI J, PARK S, JIN G, ZHAO S, MA X

Method for manufacturing pellicle, involves forming upper silicon nitride layer on upper surface of wafer substrate, where pattern is formed on lower silicon n-nitride layer, and metal layer is formed in lower silicon nitride layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M

High-performance coating film waterproofing composition comprises methyl acrylate-acrylonitrile copolymer, isocyanate group-containing silane coupling agent, titanium oxide, graphene dispersion and aluminum nitride.

KIM K S

Infrared adaptive transparent camouflage film comprises substrate portion, graphene layer on substrate portion, electrode layer spaced apart from graphene layer, and ion gel layer formed on or between graphene layer and electrode layer.

LIM M K, KIM H D, KIM K S, KIM J H, JUNG H J, LEE H J, HYUN S M, LIM M, KIM K, KIM J

Composite active material used as cathode for lithium battery, comprises core comprising lithium transition metal oxide, and a shell comprising metal oxide, carbonaceous material, and doped fluorine element.

KAPYLOU A, MOON J, SON I, KIM G, CHERNYSHOV D, MAH S, JO S, MOON J S, KIM G S, MAH S K, JO S N, ZHAO S, MA X, CHERNYSHYOV D, JIN G, MUN J S, SON I H, KIM K S, MA X G

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Manufacture of shadow mask, involves forming buffer layer, depositing metal layer, forming amorphous carbon layer and crystalline carbon layer, removing amorphous carbon layer and metal layer, and separating buffer layer and crystalline carbon layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K