国家/地区 韩国（7） 美国（5） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（6） G（3） B（2）
IPC大类 H01（6） B82（2） G03（2）
IPC小类 H01L（6） G03F（2）
IPC H01L021/027（3） G03F007/09（2） G03F007/11（2）
H01L021/02（2）
发明人 KIM S W（7）
公开年 2016（4） 2017（2）
申请年 2015（7）
专利权人 SAMSUNG ELEC.（5）

Producing pH-sensitive graphene nanostructure, comprises e.g. reducing graphene oxide to produce reduced graphene oxide, and mixing reduced graphene oxide with solvent to produce porous graphene nanostructure having open porous structure.

LEE S J, LEE J Y, KIM S W

Two-dimensional material hard mask for manufacturing electronic device e.g. capacitor, has hydrogen, oxygen and two-dimensional material layer with layered crystalline structure, and carbon structure includes graphene sheets.

SHIN K, SEOL M, SHIN H, KIM S, PARK S, SHIN K W, SEOL M S, SHIN H J, KIM S W, PARK S J

Hardmask composition used for forming pattern, comprises several graphene nanoparticles having size of preset range, and solvent.

SHIN H, KIM S, SEOL M, PARK S, CHO Y, SHIN H J, KIM S W, SEOL M S, PARK S J, CHO Y C, XUE M, ZHAO L

Hardmask composition for pattern formation comprises a set of graphene nanosheets, each being doped with boron and/or nitrogen, and a solvent.

SEOL M, KIM S, SHIN H, PARK S, CHO Y, SEOL M S, KIM S W, SHIN H J, PARK S J, CHO Y C

Germanium mono crystal thin film manufacturing method for solar cell, involves transcribing graphene on silicon oxide substrate and growing germanium thin film in high temperature.

YEO J S, LEE E H, CHEONG D I, CHOI H J, PARK Y H, KIM S W, LEE J J

Stretchable optoelectronic device used in sensor system of mobile equipment device, consists of stretchable substrate that comprises elastomeric polymer, and optoelectronic device component containing graphene layer, on substrate.

KIM T, KIM S, PARK S, LEE S, KIM T H, KIM S W, PARK S J, LEE S M

Electronic device such as optical device, has graphene layer that includes multiple nanocrystal graphenes and multiple graphene protrusions and graphene layer is covered by semiconductor layer.

SHIN H, KIM S, LEE K, PARK H, CHO E, CHO E B, KIM S W, LEE K H, PARK H J, SHIN H J