国家/地区 韩国（6） 美国（3） 世界知识产权组织（2）
IPC部 C（4） B（2） F（2）
G（2） H（2）
IPC大类 C08（3） C09（2） F21（2）
H01（2）
IPC小类 C08K（3） C09D（2） F21V（2）
H01L（2）
IPC C08K003/38（2） C08K009/04（2） C09D005/18（2）
C09D007/61（2） C09D163/00（2）
发明人 KIM S W（7）
公开年 2021（7）
申请年 2021（4）  2020（3） 
专利权人 SAMSUNG ELEC.（3） LASER LIGHTI.（2） UNIV SUNGKYU.（2）

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J

Conductive composite resin composition for photocurable three-dimensional printed material, comprises photoreactive viscosity decreasing agent, photocurable resin and conductive nanostructures, and has specified viscosity.

LEE H, KIM S, KIM S W, SANGHYE K, CHUN D

Paint composition having excellent heat dissipation effect useful for producing light-emitting diode lighting fixture, comprises aluminum nitride powder, epoxy resin, boron nitride powder, photoinitiator and conductive material.

KIM S W, LIM J J

Heat dissipation paint composition for preparing LED lighting fixture comprises boron nitride powder pretreated with ammonia plasma and an epoxy resin.

KIM S W, LIM J J

Producing composite of molybdenum disulfide-graphene-metal particles by electrically blasting metal wire in solvent containing graphene precursor and reacting with molybdenum disulfide precursor through hydrothermal synthesis method.

SUH S J, ROH J C, LEE J W, PARK J H, KIM T Y, SHIN J H, KIM S W, SHIN S H, LEE J Y, KWON H J, SUH D S, JUNG H Y, LEE S M, SHIN J K, SONG J M, AHN B W, CHOI H J, CHUL R J, KIM S, JUN K, SHINJAEKYUNG, AHN B, CHOI H

Making display module comprises forming epitaxial film having light emitting layer, semiconductor layers, attaching the film onto intermediate substrate having conductive material, patterning the film to form LED and electrically connecting the LED to driving circuit layer via the material.

SHIM J, SUH J, NAMKUNG Y, KIM S, KIM D, KIM M, NAM K, KIM S W, NAMGOUNG Y, SEOJEONGHUN, SHIM J P, JIN C, JIN D, JIN M

Forming thin film of transition metal dichalcogenide, comprises providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on the substrate, and injecting chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film.

KIM C, KIM S, BYUN K, SHIN H, SOHN A, JUNG J, KIM S W, BYUN K E, SHIN H J, SOHN A R, JUNG J H