国家/地区 美国（25）
IPC部 H（24） C（9） B（8）
G（4）
IPC大类 H01（23） B82（6） C01（6）
B32（3） G03（2） H05（2）
IPC小类 H01L（18） B82Y（5） C01B（5）
H01B（5） H01M（4） B32B（3）
B82B（2） G03F（2）
IPC H01L021/02（5） H01L029/16（5） H01L029/786（5）
H01L029/66（4） B32B009/00（3） B82Y040/00（3）
C01B031/04（3） H01L021/027（3） H01M004/133（3）
H01M004/36（3） H01M004/62（3） H01M010/052（3）
B82B003/00（2） B82Y030/00（2） C01B031/02（2）
发明人 KIM S W（25）
公开年 2013（5） 2014（4） 2016（3） 2021（3） 2022（3） 2017（2）
申请年 2015（5）  2013（4）  2012（3）  2021（3）  2014（2）  2017（2）  2020（2）  2022（2） 
专利权人 SAMSUNG ELEC.（16） UNIV SUNGKYU.（9） HYUNDAI MOTO.（2） KIA CORP（2）
KIM S W（2） KOREA INST S.（2）

Lithium secondary battery comprises negative electrode current collector; negative electrode layer disposed on negative electrode current collector; intermediate layer disposed on negative electrode layer and solid electrolyte or separator; positive electrode layer disposed on intermediate layer.

CHO S M, LIM J M, KANG H S, KIM S H, KIM S W, CHOI H S, NAM Y J, SUCK C H, CHO S, LIM J, KANG H, KIM S, JIN X, CUI H, NANRONG Z

Preparing composite metal oxide used as precursor for carbon-coated cathode active material for lithium secondary battery, involves preparing aqueous metal solution by selecting three metals among nickel, cobalt, iron, manganese, and aluminum, and obtaining precursor by adding precipitating agent.

KIM S, JEON H, WOO J, KANG T, KANG T K, JEON H J, KIM S W

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

All-solid-state battery comprises cathode-current-collector layer, layer arranged on cathode-current-collector layer, and comprising component chosen from particulate carbon material and fibrous carbon material, layer arranged between layer and cathode-current-collector layer.

NAM Y J, KIM S W, CHOI H S, LIM J M, SUCK C H, NANRONG Z, JIN X, CUI H, LIM J

Conductive composite resin composition for photocurable three-dimensional printed material, comprises photoreactive viscosity decreasing agent, photocurable resin and conductive nanostructures, and has specified viscosity.

LEE H, KIM S, KIM S W, SANGHYE K, CHUN D

Making display module comprises forming epitaxial film having light emitting layer, semiconductor layers, attaching the film onto intermediate substrate having conductive material, patterning the film to form LED and electrically connecting the LED to driving circuit layer via the material.

SHIM J, SUH J, NAMKUNG Y, KIM S, KIM D, KIM M, NAM K, KIM S W, NAMGOUNG Y, SEOJEONGHUN, SHIM J P, JIN C, JIN D, JIN M

Forming thin film of transition metal dichalcogenide, comprises providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on the substrate, and injecting chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film.

KIM C, KIM S, BYUN K, SHIN H, SOHN A, JUNG J, KIM S W, BYUN K E, SHIN H J, SOHN A R, JUNG J H

Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.

LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J

Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.

KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S

Two-dimensional material hard mask for manufacturing electronic device e.g. capacitor, has hydrogen, oxygen and two-dimensional material layer with layered crystalline structure, and carbon structure includes graphene sheets.

SHIN K, SEOL M, SHIN H, KIM S, PARK S, SHIN K W, SEOL M S, SHIN H J, KIM S W, PARK S J