国家/地区 韩国（9） 美国（5） 世界知识产权组织（2）
IPC部 H（8） C（3） B（2）
IPC大类 H01（7）
IPC小类 H01L（6） H01B（2）
IPC H01L029/16（4） H01L029/78（4） H01L021/336（3）
H01L029/66（3） H01L021/28（2） H01L021/306（2）
H01L029/10（2） H01L029/423（2） H01L029/778（2）
发明人 KIM Y S（9）
公开年 2014（4） 2015（3） 2016（2）
申请年 2014（9）
专利权人 SAMSUNG ELEC.（3）

Composite conductor for e.g. electric power transmission cable, has graphene coating layer formed on surface of conductor main body, where radius of conductor main body is about specific unit and is denoted as r.

PARK U K, LEE J S, KIM Y S, KIM J I, YOU S H

Performing electrochemical analysis for measuring restriction enzyme activity, involves preparing graphene working electrode, attaching DNA substrate, adding restriction enzyme to DNA substrate, and measuring reduction current.

ISRAM K, KIM Y S, SHIN I S

Composition for heater, comprises silicon carbide powder, graphene powder, binder, colloidal silica, electroconductive element and organosilane.

KIM Y S

Method of fabricating graphene nano device, involves placing first metal mask pattern prepared in advance on first adhesive layer and heating layer to attach first metal mask pattern on substrate.

JEON E K, KANG H S, LIM K, PARK H J, KIM K, KIM J E, KIM Y S, HEO Y S, LIM K S, KIM K S

Semiconductor device for electronic apparatus, has graphene layer that is disposed on and connects source and semiconductor element, and spaced apart from drain.

WENXU X, KIM Y, MOON C, PARK Y, YANG W, LEE J, KIM Y S, MOON C Y, PARK Y Y, YANG W Y, LEE J Y, LEE J H

Method for transferring graphene during manufacturing graphene applied device that is used in e.g. high speed radio frequency switching device, involves transferring protection metal layer and graphene layer from supporter to substrate.

LEE J, KIM Y, MOON C, LEE S, LEE C, LEE J H, KIM Y S, MOON C Y, LEE S H, LEE C S

Carbon-based electronic device e.g. thin-film transistor used for e.g. memory device, consists of substrate, gate insulation layer, gate electrode, and graphene oxide layer, which is partially reduced by irradiating using laser beam.

KIM Y S, CHOI H S

Encapsulation film used for e.g. thin film sensor, solar cell apparatus and optical electronic device, is formed by stacking bilayer comprising thin layer containing graphene oxide or reduced graphene oxide and organic polymer layer.

JEON J N, KIM K J, KIM Y S, LEE K S, RO J, KIM K, SANG N J, SU L G, YONG S K

Graphene electronic device has flash memory region and ferroelectric memory region that are positioned on graphene layer.

KIM Y, LEE C, LEE J, KIM Y S, LEE C S, LEE J H