国家/地区 美国（33）
IPC部 H（29） B（15） C（12）
G（9）
IPC大类 H01（27） B82（7） B32（6）
C01（6） G01（6） G03（4）
H05（4） C12（3） B01（2）
B05（2） C09（2）
IPC小类 H01L（15） B82Y（7） B32B（6）
C01B（6） H01M（6） G01N（5）
G03F（4） C12Q（3） H01J（3）
B01J（2） B05D（2） H01B（2）
H01G（2） H05K（2）
IPC B82Y040/00（6） C01B031/04（5） H01L029/16（5）
H01M004/62（5） H01M010/052（5） H01L021/02（4）
H01M004/02（4） H01M004/133（4） H01M004/36（4）
H01M004/38（4） H01M004/66（4） H01M010/0525（4）
B32B037/00（3） B32B037/24（3） B32B038/00（3）
发明人 LEE D（33）
公开年 2014（6） 2015（5） 2012（4） 2016（3） 2018（3） 2023（3） 2013（2） 2017（2） 2021（2） 2022（2）
申请年 2014（7）  2013（5）  2011（4）  2021（4）  2016（3）  2015（2）  2017（2）  2018（2）  2020（2） 
专利权人 SAMSUNG ELEC.（21） KUMOH NAT IN.（5） LEE D（4） AN S（2）
CORNING PREC.（2） KIM S（2） KUMOH NAT IN.（2） LG ELECTRONI.（2）
LG SILTRON I.（2） SAMSUNG CORN.（2） SK SILTRON C.（2）

System for measuring image of pattern in scanning type extreme ultraviolet mask process of manufacturing semiconductor device, has order sorting aperture configured to transmit first-order diffraction light of focused coherent EUV light.

LEE D

Semiconductor structure e.g. through silicon via structure for use in high frequency transmission, has substrate, via penetrating through substrate, liner layer formed on sidewall of via, barrier layer comprising conductive two-dimensional material, and conductor filling remaining space of via.

LEE D, WANG Y, LU C, LI D, LV Z

Semiconductor device for use in electronic apparatus, has source/drain structure including silicide film to be formed between first semiconductor region and first electrode, and conductive barrier to be formed.

KIM C, NAM S, SHIN K, LEE D, LI D, JIN C, NAM S G, SHIN K W, LEE D H

Electrode used in lithium battery, has electrode active material layer that is measured by surface and interfacial cutting analysis system (SAICAS), and ratio of change of vertical relative force (FVR) between first and second points.

LEE D, NAM H, NAM J, KWON I, LEE J, LEE J H, NAM J H, LEE D K, KWON I K, LEE D G, LI D, NAN C, QUAN Y

Positive electrode used for lithium-sulfur battery, comprises current collector and positive electrode active material layer arranged on surface of current collector, where positive electrode active material layer comprises positive electrode active material and additive.

LEE D, KIM T G, UK L D, JIN Z, LI D

Cathode pole piece for use in electrochemical device, has first cathode framework layer located between current collector and second layer, where porosity of first layer is greater than that of second layer.

XIE Y, LI D, CHEN M, LEE D, XIE Y S

Masking block used e.g. to form pattern comprises base substrate, gamma-alumina thin film disposed on base substrate, and hexagonal boron nitride thin film doped with carbon and oxygen and disposed on gamma-alumina thin film.

LEE D, PARK J, PARKJAEHYUN, LEE D J

Diaphragm for e.g. speaker for electronic apparatus, has graphene-containing layer including graphene nanoparticles with average particle size of 10 nanometer, where graphene-containing layer is arranged on surface of auxiliary layer.

KIM S, SHIN H, SEOL M, LEE D, SHIN H J, UK L D

Method of manufacturing multi-layered graphene film used as electrode in manufacture of e.g. battery, involves forming graphene sheet fragments by adjusting graphene growth time to be shorter than graphene growth time of graphene layer.

LEE D, KWON S

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S