国家/地区 韩国（9）
IPC部 H（9） B（5） C（4）
IPC大类 H01（8） C01（4） B32（2）
B82（2） H05（2）
IPC小类 H01L（5） C01B（4） H01M（3）
B32B（2） B82Y（2）
IPC H01L029/16（4） C01B031/04（3） H01M004/133（3）
B32B037/24（2） B32B038/00（2） B82Y030/00（2）
B82Y040/00（2） C01B031/02（2） H01L021/02（2）
H01L029/15（2） H01L031/028（2） H01M004/04（2）
H01M004/1393（2） H01M004/38（2） H01M004/587（2）
发明人 LEE D W（9）
公开年 2014（3） 2016（2） 2018（2）
申请年 2013（2）  2014（2）  2016（2）  2017（2） 
专利权人 SAMSUNG ELEC.（8） SHIN H（2） WOO Y（2）

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.

LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J

Heat-dissipation sheet used in electronic device, comprises thermally conductive base layer formed on one surface of heat radiation enhancing layer comprising graphene and/or graphite, and has specified horizontal thermal conductivity.

MIN E H, LEE D, KIM M S, NOH H S, HAN H J, LEE D W

Cathode layer for lithium secondary battery of mobile electronic device, has carbon structure including cavity without binder and silicon particles in cavity, where structure comprises one of graphene, reduced graphene oxide and graphite.

LEE D, SHIN H, PARK S, LEE D W, SHIN H J, PARK S J

Anode material for secondary battery used in electronic device has graphene foam structure that includes graphene frames connected to each other, and nanostructures in pores of graphene foam structure.

SHIN H, LEE D, PARK S, SHIN H J, LEE D W, PARK S J

Multi-layered graphene film used as electrode of energy storage device e.g. battery, supercapacitor has spacer layer having height which maintains desired distance between first graphene layer and upper graphene layer.

LEE D, KWON S, LEE D W, KWON S G

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y