国家/地区 韩国（7） 美国（5）
IPC部 H（6） C（5）
IPC大类 H01（6） C01（3） C23（3）
IPC小类 H01L（6） C01B（3） C23C（3）
IPC H01L029/16（4） C01B032/186（3） C23C016/02（3）
C23C016/26（3） C23C016/50（3） H01L021/02（3）
C23C016/511（2） C23C016/513（2） H01L021/324（2）
H01L051/00（2）
发明人 LEE E（7）
公开年 2020（7）
申请年 2019（6） 
专利权人 SAMSUNG ELEC.（5） CENT ADVANCE.（2） POSTECH ACAD.（2）

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Graphene laminate used for organic electronic device, comprises flexible substrate, metal oxide layer formed on flexible substrate, interfacial adhesion layer formed on metal oxide layer, and graphene formed on interfacial adhesive layer.

CHO K W, LEE E

Graphene used for organic electronic device, laminate comprises substrate, semiconductor layer comprising chalcogen compound, interfacial adhesion layer, and electrode formed on interfacial adhesive layer and comprising graphene.

CHO K W, LEE E

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C