国家/地区 韩国（10） 美国（6） 中国（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（7） B（6） C（5）
IPC大类 H01（7） B82（4） C01（4）
C23（2） C25（2）
IPC小类 H01L（5） B82Y（4） C01B（4）
C23C（2） C25D（2） H01B（2）
IPC C01B031/02（4） B82Y030/00（2） B82Y040/00（2）
B82Y099/00（2） C23C018/16（2） C23C018/20（2）
C23C018/31（2） C23C018/40（2） C25D005/10（2）
C25D005/56（2） H01B001/04（2） H01L029/78（2）
H01L033/04（2） H01L051/00（2）
发明人 LEE J H（11）
公开年 2012（7） 2011（3）
申请年 2011（11）
专利权人 SAMSUNG ELEC.（5） SAMSUNG LED .（2） SNU R DB FOU.（2） UNIV SEOUL N.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Resin plating method during manufacture of e.g. electronic equipment, involves forming graphene thin layer on resin substrate by applying expanded graphite dispersion to resin substrate and electroplating resin substrate.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S

Method for coating substrate in manufacture of graphene-oxide coated substrate, involves preparing graphene-oxide dispersed solution, dipping substrate in graphene-oxide dispersed solution, and drying coated substrate.

HWANG T S, LEE J H, NAM J D, OH J S

Manufacture of bottom contact type FET, involves forming electrode on substrate as source and drain, coating graphene dispersion on substrate, absorbing oxide in interval between source and drain, and reducing absorbed graphene oxide.

LEE H Y, LEE J H, SEO S H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Graphene quantum dot light emitting device comprises first graphene; graphene quantum dot layer disposed on the first graphene and containing graphene quantum dots; and second graphene disposed on the graphene quantum dot layer.

HWANG S, KO G, SIM S, CHUNG H, SONE C, LEE J, HONG B, BAE S, HWANG S W, KO G W, SIM S H, CHUNG H J, SONE C S, LEE J H, HONG B H, BAE S K

Graphene light-emitting device e.g. LED comprises a p-type graphene doped with a p-type dopant, an n-type graphene doped with an n-type dopant, and an active graphene that is disposed between the p-type graphene and the n-type graphene.

HWANG S, KO G, SIM S, CHUNG H, SEONG H, SONE C, LEE J, KO H, CHOI S, KIM S, SUN W W, GUAN Y K, SUN H S, CHUNG H J, HAN K S, CHEOLSOO S, LEE Z H, HUYNH D K, HWANG S W, KO G W, SIM S H, SEONG H K, SONE C S, LEE J H, KO H D, CHOI S H, SHIM S, KO K, JEONG H, GO J, SON C

Apparatus for centrifugal-type continuous synthesis and purification of graphene oxide, has implantation portion which injects graphene oxide-containing solution to rotator, exhausting portion, filtering portion and dialysis portion.

JIN C, LEE H, LEE J H

Graphene oxide reducing agent, is halogen element.

LEE H Y, LEE J H, MOON I K

Manufacture of reduced graphene oxide for manufacturing reduced graphene-polymer composite, involves treating graphite with strong acid, mixing with halogen-substituted aromatic compound and stirring.

KU B C, PARK O K, LEE S H, NA S I, JO H I, KIM J K, LEE J H, KU B, PARK O