国家/地区 中国（15）
IPC部 C（8） H（8） B（4）
IPC大类 H01（8） C09（3） B01（2）
B82（2） C01（2） C02（2）
C08（2）
IPC小类 H01L（5） C09D（3） B01J（2）
B82Y（2） C01B（2） C02F（2）
IPC H01L033/00（3） B82Y030/00（2） C01B032/184（2）
C09D007/61（2） C09D163/00（2） C09D167/08（2）
C09D175/04（2） H01L033/12（2） H01L033/32（2）
发明人 LI P（16）
公开年 2019（16）
申请年 2019（13）  2018（3） 
专利权人 HC SEMITEK S.（4）

Method for preparing negative electrode material that is utilized for e.g. energy materials, involves preparing graphene oxide buffer followed by preparing pyrophosphate solution and nickel salt solution, mixing, stirring and sintering.

ZHANG J, JI G, LI P, HUANG C, OU X, ZHANG B

Paint film of the aqueous resin anti-corrosive coating comprises graphene-based materials uniformly arranged in the paint film structure to form a graphene layer, and the graphene layer is on the upper part of the paint film structure.

LI P, ZHAO Y, LI W, ZHOU W, MA L, YIN Y

Synthesis method of graphene resin polymer and graphene resin coating involves performing modification reaction to oxidized allotrope of carbon, so as to bind to substituent groups having double bonds and hydroxyl groups.

SUN C, LI P

Preparing graphene-cadmium sulfide-copper-zinc composite photocatalyst comprises e.g. adding graphene oxide to deionized water, ultrasonically stripping, preparing dispersion, adding soluble zinc salt and copper soluble salt, and stirring.

ZHU Q, ZHANG K, HU N, JIANG S, LI P

Preparing highly filled graphene oxide/resin hybrid involves forming suspension of resin, adding resin to deionized water, heating and stirring, cooling to room temperature, and removing impurities by filtration to obtain resin suspension.

LU Y, LI P, WU X, GUO B, YANG Z, ZHANG L, MA Y

Gallium nitride-based LED epitaxial wafer, has metal nanometer particle layer provided with multiple metal nano-particles that are located on graphene layer, where diameter of each metal nano-particles is in specific range.

DING T, ZHOU B, HU J, LI P

Gallium nitride-based high electron mobility transistor epitaxial wafer, comprises substrate, graphene layer, metal nanometer particle layer, three-dimensional nucleation layer, buffer layer, gallium nitride channel layer and aluminum gallium nitride barrier.

DING T, ZHOU B, HU J, LI P

Flexible inorganic optoelectronic device structure, has lower organic protective layer, silicon film layer, patterned metal doped film layer, graphene layer, gallium nitride microcolumn array and silicon dioxide protective layer.

YAN H, TIAN Z, LUO Q, JIANG W, LI P, LI H, HE X

Preparing graphene or metal oxide coated metal nanowire grid comprises e.g. preparing metal nanowire grid on substrate, depositing graphene oxide on metal nanowire grid surface by using electrochemical deposition method, and reducing.

MA J, YANG Y, LI P, XU H, LIU Y

Graphene tube comprises millimeter-sized ball and powder including micron-sized metal powder and graphene.

YANG G, MENG Q, LI P, WANG T, ZHANG S, REN Y, WANG W