国家/地区 中国（39）
IPC部 H（28） C（12） B（4）
G（3） A（2）
IPC大类 H01（26） C01（9） C08（3）
G01（3） B01（2） C22（2）
H05（2）
IPC小类 H01M（16） C01B（9） H01L（5）
C08K（3） C08L（3） H01G（3）
B01J（2） C22C（2） G01L（2）
H01H（2） H05B（2）
IPC H01M010/0525（12） H01M004/13（8） H01M004/62（7）
H01M010/052（7） H01M004/36（6） H01M004/139（5）
H01M004/38（5） H01M004/48（5） H01M010/42（5）
C01B033/113（3） C08K003/04（3） H01G011/30（3）
H01G011/34（3） H01G011/36（3） H01G011/48（3）
发明人 LIANG S（39）
公开年 2021（39）
申请年 2021（24）  2020（13）  2019（2） 
专利权人 KUNSHAN BAOC.（15） CHINA HUANEN.（3） HUANENG NEW .（3） UNIV WUYI（3）
WUYISHAN BIK.（3） BEIJING HUAT.（2） BEIJING YUAN.（2） DONGGUAN FUN.（2）
UNIV CHINA M.（2） UNIV HENAN S.（2） UNIV PEKING（2）

Construction of graphene oxide alkenyl nucleic acid aptamer sensor for detecting fumonisin B1, by modifying carboxyl-X-rhodamine fluorescent group, and performing fluorescence quenching by graphene oxide and aptamer conjugated adsorption.

ZHANG X, XIE M, WEI Y, LIANG S, ZHANG M, GUO X

Synthesis of rhodium-induced growth of zinc oxide-zinc sulfide heterostructure photocatalyt for producing hydrogen, involves adding zinc powder to graphene oxide dispersion, dripping rhodium chloride trihydrate and mixing obtained rhodium-zinc oxide/reduced-graphene oxide catalyst with thioacetamide.

ZHANG R, LIANG S, WANG X

Semiconductor transistor e.g. non-doped source/drain transistor, includes gate structure on high-k gate dielectric layer, comprising side walls and gate, where main width is greater than or equal to sub width, and source and drain which are provided on both sides of gate structure.

LIN Y, XU L, LIANG S, ZHANG Z

Preparing electrode used in e.g. energy storage application, involves ultrasonically dispersing nitrogen-sulfur co-doped graphene oxide grafted polyaniline/molybdenum disulfide, acetylene black and PTFE in absolute ethanol, coating on surface of foamed nickel, vacuum drying, and pressing.

LIN Z, ZHANG Y, LIANG S, LIN H, HU J, ZHAO J

Preparing graphene grafted polymer electrode material for preparing electrode used in supercapacitor, involves preparing nitrogen-doped graphene oxide, diisocyanate-modified nitrogen-doped graphene oxide, and nitrogen-doped graphene oxide grafted polyaniline-co-p-phenylenediamine/manganese dioxide.

LIN Z, ZHANG Y, LIANG S, LIN H, HU J, ZHAO J

Preparing nitrogen-sulfur co-doped graphene oxide grafted polythiophene-co-pyrrole/cobalt tetraoxide electrode material useful in electrode of super capacitor, comprises preparing graphene oxide, grafted graphene oxide and co-polyaniline.

LIN Z, ZHANG Y, LIANG S, LIN H, HU J, ZHAO J

Method for measuring pressure based on graphene sensor, involves calculating wave trough drift amount, applying real-time pressure on sensor to determine linear relationship between pressure and wave trough float amount of output spectrum.

XIAO Y, ZHAO M, LIANG S, YANG F, LI Y

Preparation of self-healing polyimide composite material for additive manufacturing, involves dispersing photothermal material in dispersant, adding dialdehyde, dispersing diamine which is compound with two primary amine groups, and polyamine in dispersant and processing material.

AO J, TIAN Z, LIU Z, JIANG Z, LIANG S

Graphene composition structure sensor for measuring pressure, has graphene layer that is transferred and covered on fusion optical waveguide layer and polydimethylsiloxane layer aligned and placed on graphene layer in pressure sensing area.

LI Y, YANG F, LIANG S, ZHAO M, XIAO Y

Pre-lithiated silicon-based cathode pole piece for use in lithium ion battery, has silicon-based active material layer set between current collector and pre-lithiation layer, and silicon-based active material layer provided with micropores.

QIU Z, LIANG S, LI W, ZHAO Y