国家/地区 韩国（6） 中国（3） 美国（3） 台湾（2）
IPC部 G（3） H（3） B（2）
C（2）
IPC大类 H01（3） B01（2） C01（2）
G01（2）
IPC小类 H01L（3） C01B（2） G01N（2）
IPC C01B032/186（2） H01L021/285（2） H01L021/768（2）
H01L023/532（2） H01L027/108（2） H01L029/45（2）
发明人 LIM H（6）
公开年 2022（6）
申请年 2021（3）  2020（2） 
专利权人 SAMSUNG ELEC.（3） DAEGU GYEONG.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Substrate for analysis of biomaterial e.g. amino acid derived from liquid biopsy, comprises liquid biopsy sample injection unit having well-shaped pattern on surface of substrate, and liquid biopsy-derived biological material containing parylene coating on surface of substrate.

KIM M S, LIM H J, LIM H

Graphenol compound useful in biological and medical research fields comprises e.g. two-dimensional graphene sheet formed by connecting multiple of carbon atoms, multiple hydroxy groups provided on one surface of graphene sheet.

LIM H, PARK Y H, AHN J

Analyzing image, useful to analyze cell membrane structure and components of living biological sample, comprises e.g. preparing substrate i.e. cell culture medium on which biopolymer membrane is formed, and preparing biological sample.

LIM H, MOON D W

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Wiring structure for use in semiconductor device, has first conductive pattern, ohmic contact pattern, oxidation prevention pattern, diffusion barrier, and second pattern sequentially stacked in stated order on substrate.

JEONG G, LEE S, YOON J, YAMAMOTO K, SHIN H, BYUN K, CHO M, LIM H, ZHENG G, LI Z, YOUN J, SHAN B, SHEN X, LIM H S, JO M, BYUN K E, SHIN H J, SU Y J, LEE S Y, JUNG K O