国家/地区 美国（6） 中国（4） 台湾（2）
IPC部 H（6） B（4） C（2）
IPC大类 H01（6） B01（3） B82（2）
IPC小类 H01L（5） B01J（3） B82Y（2）
IPC H01L021/336（3） B01J021/06（2） B01J021/18（2）
H01L021/4763（2） H01L029/06（2） H01L029/78（2）
发明人 LIN Y（10）
公开年 2012（10）
申请年 2012（6）  2010（3） 
专利权人 INT BUSINESS.（5） TAIWAN TEXTI.（2）

Formation of transistor structure involves forming graphene layer on insulating layer, forming stack of primary and secondary metal portions, and laterally offsetting sidewalls of primary metal portion relative to secondary portion.

AVOURIS P, FARMER D B, LIN Y, ZHU Y

Metal-free complementary metal oxide on semiconductor integrated circuit for use in semiconductor chip fabrication field, has graphene layer including region of undoped graphene, where undoped graphene is connected with transistor channel.

LIN Y, YAU J

Organic dye photocatalyst compound preparation includes mixing graphene-titanium dioxide compound, solution that contains ferrous and ferric ions and solution that contains hydroxyl ion.

GENG Z, LIN Y, PAN N, WANG X, ZENG J, SONG Y

Preparing graphene/nano titanium dioxide composite, comprises dispersing nano titanium dioxide and graphene in water/alcohol solution, and reacting nano titanium dioxide and graphene in dispersion solution to obtain product.

LIN Y, LI X, LIN R, ZENG S

Manufacturing method of transparent conductive layer, involves etching graphene layer to form grid pattern.

CHEN J, HU G, JIANG M, LIAO J, LIN Y, QIU B

Ruthenium-graphene film adhered electrochemical luminescence sensor manufacturing method, involves dripping ruthenium solution on electrode surface, arranging graphene film on surface, and washing electrode with water.

CHEN Y, GAO W, XI J, LIN Y, LU F, ZHANG X

Preparing graphene/nano-titanium dioxide composites, comprises dispersing nano-titanium dioxides and graphenes in water/ethanol solution and allowing nano-titanium dioxides and graphenes within dispersion to react at specified conditions.

LIN Y, TSENG S, LIN J, LEE S, LIN R J, LI X Y, LIN Y J, ZENG S M, TSENG S M, LEE S Y

Method for forming bi-layer graphene transistor device, involves subjecting electric field to bi-layer graphene channel while subjecting strain that reduces interlayer spacing in bi-layer graphene channel to create bandgap.

LIN Y, YAU J

Graphene-based switching device comprises bottom gate electrode which is disposed on substrate, bottom gate dielectric layer which is disposed over bottom electrode, and bi-layer graphene which is disposed over bottom gate dielectric layer.

LIN Y, YAU J

Graphene-based field effect transistor for high-frequency electronics, comprises graphene layer located on insulating layer, first and second metal portions, first and second electrodes, gate dielectric layer, and dielectric seed layer.

AVOURIS P, FARMER D B, LIN Y, ZHU Y, LIN Y M