国家/地区 中国（5） 美国（3）
IPC部 B（5） H（4） C（2）
G（2）
IPC大类 H01（4） B82（3） B01（2）
G01（2）
IPC小类 H01L（4） B82Y（3） B01J（2）
IPC B82Y040/00（2） B82Y099/00（2） H01L027/088（2）
H01L029/78（2）
发明人 LIU F（8）
公开年 2012（4） 2013（3）
申请年 2012（8）
专利权人 INT BUSINESS.（3）

Graphene-based electromechanical switch, has flexible conductive element separated from material by gap, where gap is sized to create negative threshold voltage at gate material for opening circuit.

GUO D, HAN S, LIU F, WONG K K H, YUAN J

Making graphene-metal and quantum dot-porous silica composite nano-material sheet core electrochemical luminous immune sensor comprises providing chromatographic paper with wax printer channel pattern, and heating wax printing of paper.

LI M, LIU F, ZHANG Y, WANG P, WANG Y, HUANG J, YU J, LI L, LIU W, LI W, GE L, GE S, YAN M, CHU C

Efficient nanoiron-loaded material used for adsorption of phosphate in water, comprises graphene and nanoiron.

LIU F, YANG B, WANG P, ZUO J, XIE B

New bismuth iodide/graphene oxide compound prepared by adding graphite powder with graphite oxide, ultrasonically dispersing graphite oxide solution, adding iodide with graphene oxide dispersion liquid, useful as photo-catalytic material.

LIU F, LI J, LI G, WANG L

Three-dimensional integrated circuit has gate stack portion including graphene layer, disposed on dielectric layer formed on another dielectric layer disposed on source region, drain region, another stack portion and substrate.

CHANG J B, HAENSCH W E, LIU F, LIU Z

Preparing graphene oxide/nano-precious metal composite material, comprises e.g. reducing salt of precious metal using liquid phase reduction method to obtain noble metal solution and dispersing graphene oxide into alcohol solution.

CHENG Y, GUO J, LIU F, SUN A, WANG B, XU G, QIAN Z

Tunnelling field effect transistor structure source region which is made of graphite nano-belt whose width is greater than width of graphene nanometre belt of channel region and drain region.

DU G, LIU F, LIU X, WANG Y

Three-dimensional integrated circuit for three-dimensional hybrid integration of e.g. graphene field-effect transistors comprises semiconductor device, insulator formed on the semiconductor device, interconnect, and graphene device.

AVOURIS P, WU Y, ZHU W, CHANG J B, HAENSCH W E, LIU F, LIU Z