国家/地区 美国（6） 意大利（2）
IPC部 H（6） B（4） G（3）
IPC大类 H01（6） B01（3） G01（3）
IPC小类 H01L（6） B01L（3） G01N（3）
IPC H01L029/16（4） B01L003/00（3） G01N027/414（3）
H01L029/66（3） H01L021/02（2）
发明人 LOVERSO S（6）
公开年 2013（2） 2016（2）
申请年 2015（3）  2013（2） 
专利权人 STMICROELECT.（5） ACCARDI C（2） LOVERSO S（2） RAVESI S（2）
SPARTA N G（2）

Manufacturing method of graphene-based electrochemical sensor, involves providing metal layer on first substrate.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G

Electrochemical sensor for use in microfluidic system, has graphene layer that forms wall of microfluidic chamber and configured to act as channel-region of FET.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G

Electronic device comprises a substrate having at least one hydrophilic surface, a graphene layer, and elements or functional groups from a solvent selected from acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone, and mixtures.

RAVESI S, ACCARDI C, TRINGALI C, SPARTA N G, LOVERSO S, GIANNAZZO F

Method for coupling graphene layer and doped silicon substrate of electronic device e.g. transistor, involves providing solvent layer on hydrophilic surface of doped silicon substrate, and depositing graphene layer on solvent layer.

SPARTA N G, TRINGALI C, LOVERSO S, RAVESI S, ACCARDI C, GIANNAZZO F

Making electrochemical sensor used in device, contains e.g. forming graphene layer on metal layer present on donor substrate, forming structural layer on graphene layer and separating intermediate structure from donor substrate.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G

Transferring graphene layer comprises growing graphene layer on metal layer, laminating dry film photoresist on graphene layer, chemically etching away metal layer, and removing dry film photoresist.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G