国家/地区 韩国（6）
IPC部 C（5） B（2） H（2）
IPC大类 C01（5） B32（2） C23（2）
IPC小类 C01B（5） B32B（2） C23C（2）
IPC C01B031/02（5）
发明人 NA D H（6）
公开年 2013（6）
申请年 2012（5） 
专利权人 SAMSUNG TECH.（6） HANWHA AEROS.（2）

Chemical vapor deposition system used for manufacturing graphene, comprises cooling portion which cools grapheme, graphene combiner which synthesizes graphene by chemical vapor deposition, and material supply portion.

NA D H

Apparatus, useful for producing graphene that is used in e.g. biosensor, comprises conveying element, laminate, carrier film, transfer element, heating cabinet, target substrate and graphene doping part.

YOON J H, NA D H

Manufacture of circuit board involves insulating flat plate of copper layer formed on one side surface of pin layer, patterning pinned layer, exposing specific pattern by removing copper layer and etching graphene layer.

NA D H

Manufacture of graphene film involves bonding catalytic metal layers, providing catalytic metal films on surface of obtained bonded product, forming carrier layers on adhesive tapes, and removing catalyst metal film and carrier layer.

YOON J H, NA D H, KIM N Y

Copper-based thin metal film useful for a catalytic metal for synthesizing graphene, comprises silver.

YOON J, NA D, SONG Y, WON D, YOON J H, NA D H, SONG Y I, WON D K, YUAN D

Method used for attaining graphene, involves forming graphene on catalyst metal, forming supporter, removing catalyst metal by wet etching using etchant, exposing graphene and transferring exposed graphene.

NA D H, YOON J H