国家/地区 韩国（15） 美国（11） 中国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3）
IPC部 H（9） C（7） B（3）
IPC大类 H01（9） C01（7） B82（2）
C23（2）
IPC小类 C01B（7） H01L（6） H01J（3）
B82B（2） C23C（2）
IPC H01L029/16（5） C01B031/02（3） C01B031/04（3）
H01J001/30（3） H01J001/304（3） H01J009/02（3）
H01L029/66（3） H01L029/78（3） B82B003/00（2）
H01J001/308（2） H01L021/768（2） H01L023/532（2）
H01L029/267（2） H01L029/778（2）
发明人 PARK S（16）
公开年 2015（16）
申请年 2014（8）  2015（5）  2013（3） 
专利权人 SAMSUNG ELEC.（9） UNIV SEOUL N.（4） KUMOH NAT IN.（3） INHA IND PAR.（2）
KUMOH NAT IN.（2） LEE J（2） LG ELECTRONI.（2） PARK S（2）
SHIN H（2）

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Manufacture of iron oxide-graphene composite for oxidation-reduction catalyst, involves producing dispersion solution by dispersing exfoliated graphene oxide in solvent, adding iron precursor and hydrothermally reacting.

PARK S, LEE S J

Three-dimensional porous oxide graphene nanostructure used for agent for absorbing organic material, comprises porous oxide graphene including carbon skeleton of honeycomb structure, and carbon skeleton-containing silicon coating layer.

PARK H S, KANG S O, PARK S

Graphene conductivity inspection apparatus, has optic process part for irradiating terahertz wave in graphene, and determining unit for detecting terahertz wave from optic process part and oxidation and reducing zone of graphene.

KIM H, PARK S H, KIM D, SUNG K H, PARK S

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Method for fabricating field effect transistor, involves filling slit with potential barrier material is provided to induce Fowler-Nordheim tunneling through graphene channel layer when gate voltage is applied to gate electrode.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J

Electrode connecting structure for electronic device, has metal layer that is formed on adhesion layer, which is disposed on graphene layer.

LEE J, LEE C, PARK S, LEE J H, LEE C S, PARK S J

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Graphene film comprises substrate, graphene layer provided on substrate, and charge transport layer comprising nanowires provided between substrate and graphene layer.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M