国家/地区 中国（16）
IPC部 C（11） H（5） A（2）
B（2）
IPC大类 C01（6） H01（5） A61（2）
B01（2） C03（2）
IPC小类 C01B（6） H01L（3） A61L（2）
B01J（2） C03C（2） H01M（2）
IPC C01B032/182（2） C01B032/184（2） C03C017/34（2）
H01L021/336（2） H01L029/16（2） H01M004/36（2）
H01M004/583（2） H01M004/62（2）
发明人 PENG S（16）
公开年 2017（16）
申请年 2017（11）  2015（3）  2016（2） 
专利权人 BENGBU DESIG.（6） INST MICROEL.（4） AECC BEIJING.（2） UNIV CENT SO.（2）

Preparing graphene electrochromic glass comprises setting heating section, a coating section and annealing section, heating the glass substrate to the preset temperature, transmitting into the coating section, and annealing.

CUMMINGS W J, GAN Z, JIN K, JIN L, LI G, PENG S, WANG D

Generating graphene film on surface of substrate comprises e.g. dissolving carbon in liquid metal, saturating, liquid metal is inert to carbon, attaching graphene sheets on surface of substrate and separating graphene sheets.

BAO T, PENG S, WANG D

Device for preparing graphene film, has tank filled with tin bath, partition wall, upper communication port, lower communication port, liquid supply device arranged on upper side of tank, heating device, linear motor and cooling device.

BAO T, PENG S, WANG D

Device for growing graphene film on surface of substrate, comprises atmosphere box for providing protective gas atmosphere, atmosphere box is placed with pool whose outer wall set to heating element, substrate lifting frame is set over bath.

BAO T, PENG S, WANG D

Lithium battery anode material comprises fluorinated graphene and manganese dioxide.

CHEN X, NA W, PENG S, WANG N, YAN S

Composite anode material useful for lithium perfluorocarbon battery, comprises manganese dioxide, conductive polymer and fluorinated graphene.

CHEN X, NA W, PENG S, WANG C, YAN S, NAN W

Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern.

ZHANG D, JIN Z, SHI J, PENG S, HUANG X, YAO Y

Floating graphene-silicon heterojunction transistor structure, has gate dielectric layer and gate electrode that are formed on graphene film which is in contact with portion of source and drain regions to form heterojunction.

JIN Z, YAO Y, HUANG X, SHI J, PENG S, ZHANG D

Graphene device manufacturing method involves testing metal electrode around self aligned metal layer, so as to partially cover self-aligned metal layer.

PENG S, JIN Z, ZHANG D, SHI J

Self-aligned graphene-based FET manufacturing method, involves forming photo-resist with photo-resist layer, forming gate electrode with photo-resist layer and gate structure, and generating source electrode and drain electrode.

JIN Z, HUANG X, YAO Y, PENG S, SHI J, ZHANG D