国家/地区 中国（7）
IPC部 H（6） B（5） C（3）
G（2）
IPC大类 H01（6） B82（5） C01（3）
C23（2）
IPC小类 H01L（6） B82Y（5） C01B（3）
C23C（2）
IPC H01L029/16（4） C01B031/04（3） H01L029/78（3）
H01L029/786（3） H01L051/05（3） B82Y010/00（2）
B82Y030/00（2） B82Y040/00（2） B82Y099/00（2）
C01B031/02（2） C23C016/26（2） H01L021/336（2）
H01L027/32（2） H01L029/06（2） H01L029/08（2）
发明人 SEO D（7）
公开年 2014（3） 2011（2）
申请年 2010（2）  2013（2） 
专利权人 SAMSUNG ELEC.（6）

Manufacturing display apparatus involves preparing support substrate, forming metal oxide layer on surface of support substrate, metal oxide layer comprises first charges, and forming debonding layer on surface of metal oxide layer.

SIM J, SHIN H, KIM H, SEO D, XU D, SHEN X, SHEN J, SUH D, KIM H S, SHIM J H

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H