国家/地区 中国（9） 韩国（9） 美国（9） 欧洲专利局（EPO）（4）
IPC部 H（10） C（7） B（5）
G（2）
IPC大类 H01（10） B82（4） C01（4）
C08（3）
IPC小类 H01L（9） B82Y（4） C01B（4）
C08K（3） C08L（3） C08G（2）
IPC H01L029/16（8） H01L029/78（6） H01L029/06（4）
H01L029/66（4） H01L029/786（4） B82Y010/00（3）
C01B031/04（3） C08K003/04（3） H01L021/336（3）
H01L029/08（3） H01L029/10（3） C01B031/02（2）
H01L029/02（2） H01L029/47（2） H01L029/739（2）
发明人 SONG H（15）
公开年 2014（15）
申请年 2013（11）  2014（3） 
专利权人 SAMSUNG ELEC.（9） BYUN K（3） CHUNG H（3） HEO J（3）
PARK S（3） SEO D（3） SONG H（3） LEE J（2）
SNU R DB FO.（2） UNIV BEIJING.（2） UNIV SEOUL N.（2）

Preparing nitrogen-doped graphene comprises preparing graphene dispersion liquid, mixing the graphene dispersion liquid and nitrogen source, ultrasonically treating to obtain mixture, heating, filtering, and drying the filter cake.

ZHAO D, DAI T, SONG H, ZHOU P

Graphene device has insulating layer which is provided between graphene layer and gate electrode, and semiconductor substrate is provided with tunable Schottky barrier formed by junction of source electrode, graphene layer and substrate.

CHUNG H, SEO D, PARK S, BYUN K, SONG H, YANG H, HEO J, CHUNG H J, PARK S J, BYUN K E, SONG H J, YANG H J, HEO J S

Graphene oxide/organic aerogel composite material comprises nano-graphene oxide, and organic aerogel.

CHEN X, GUO K, HU Z, SONG H

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Graphene/polyaniline spherical composite material comprises compounded graphene sheet and polyaniline sheet having spherical micron-sized structure and holes.

LIU H, SONG H, ZHANG W

Electronic device e.g. field effect transistor (FET) has graphene that directly contacts area of semiconductor layer, and metal layer on graphene.

BYUN K, PARK S, SEO D, SONG H, LEE J, CHUNG H, HEO J, BYUN K E, PARK S J, SONG H J, LEE J H, CHUNG H J, HEO J S

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Graphene switching device for use as diode has gate electrode which is provided on gate insulation layer arranged on graphene layer set on insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Polymer nanocomposite material comprises filler including graphene oxide-cyclodextrin.

LI C, LIU B, ZHANG S, CHEN W, SONG H, YAO D, YU R, ZHOU J