国家/地区 日本（6） 美国（4）
IPC部 H（6） C（4） B（3）
IPC大类 H01（6） C01（4） B32（3）
IPC小类 H01L（6） C01B（4） B32B（3）
IPC H01L029/786（6） H01L021/336（5） C01B032/15（4）
C01B032/18（4） C01B032/182（4） H01L021/02（4）
H01L029/16（4） B32B009/00（3） H01L021/28（2）
H01L029/66（2） H01L051/05（2） H01L051/30（2）
发明人 TATENO Y（6）
公开年 2017（6）
申请年 2016（3）  2017（3） 
专利权人 SUMITOMO ELE.（6） UNIV TOHOKU（5）

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Substrate for electronic device, such as a field-effect transistor, includes graphene film having atomic arrangement oriented in relation to atomic arrangement of material forming the surface layer region of support substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, MIHASHI F

Electronic apparatus e.g. FET has graphene layer on which ohmic electrode is contacted, and whose surface ratio of nickel-carbon bond with respect to carbon-carbon bond is set to preset range.

YONEMURA T, OKADA M, SUEMITSU M, FUKIDOME H, NAGASAWA H, TATENO Y

Electronic apparatus i.e. FET, has ohmic electrodes provided on graphene layer, where gap between ohmic electrodes measured using Raman spectroscopy is larger than D band strength ratio with respect to G band in which carrier drives.

YONEMURA T, OKADA M, NAGASAWA H, SUEMITSU M, FUKIDOME H, TATENO Y

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F