国家/地区 日本（5） 美国（5） 韩国（3） 台湾（3）
IPC部 H（6） B（2） C（2）
IPC大类 H01（6） B82（2） C01（2）
IPC小类 H01L（6） B82Y（2） C01B（2）
IPC H01L023/532（6） H01L021/3205（5） H01L021/768（5）
H01L023/52（5） H01L021/28（4） H01L021/285（3）
B82Y099/00（2） C01B031/02（2） H01L021/00（2）
H01L023/48（2） H01L023/522（2） H01L029/15（2）
发明人 WADA M（6）
公开年 2012（4） 2013（2）
申请年 2011（6）
专利权人 TOSHIBA KK（6）

Semiconductor device e.g. LSI, has catalyst metal film on substrate and processed with specific plasma, graphene formed on metal film, interlayer insulation film and carbon nanotube provided in contact hole penetrating insulation film.

KATAGIRI M, YAMAZAKI Y, SAKAI T, SAKUMA H, SUZUKI M, WADA M

Semiconductor device has graphene layers which include multiple graphemes laminated perpendicularly with respect to the corresponding side surfaces of core of wiring.

WADA M, YAMAZAKI Y, KAJITA A, SAKATA A

Graphene interconnection for use in interconnection layer of large scale integration device, has graphene layer formed on catalyst film in interconnection trench and provided with graphene sheets.

SAITO T, WADA M, KAJITA A, SAKATA A

Graphene interconnection of large scale integration (LSI) device, has graphene sheets which are stacked in direction perpendicular to side surfaces of interconnection trench.

SAITO T, WADA M, KAJITA A

Semiconductor device for NAND flash memory comprises insulating layer with trench, interconnect layer in trench having copper and concave portion in the copper, and graphene sheet on inner surface of concave portion.

WADA M, YAMAZAKI Y

Semiconductor device e.g. NAND-type memory devices comprises catalytic metal film formed above substrate, graphene film formed on catalytic metal film, contact plug connected to graphene film, adjustment film, and dielectric film.

YAMAZAKI Y, WADA M, SAKAI T