国家/地区 中国（8）
IPC部 H（7）
IPC大类 H01（7）
IPC小类 H01S（5） H01L（2）
IPC H01S003/067（4） H01S003/098（3） H01S003/08（2）
H01S003/11（2）
发明人 WANG P（8）
公开年 2011（5） 2012（3）
申请年 2011（8）
专利权人 UNIV BEIJING.（5） UNIV FUDAN（3）

Method for measuring thickness and band structure of graphene film, involves establishing proper theory model according to structure of film and fitting analyzed elliptical data to aluminum foil stock to establish theory model base.

SHEN Y, SUN Q, WANG P, ZHANG W, ZHOU P

Silicon carbide substrate epitaxial growth based graphene passive mode-locked laser, has wavelength division multiplexer connected with silicon carbide substrate that is connected with graphene to form laser mode locking device.

LIU J, WANG P

Graphene passive mode-locked fiber laser, has circulator whose end part is connected with polarization controller that is connected with multiplex optical fiber coupler of wavelength division multiplex optical fiber coupler.

LIU J, WANG P, XU J

Gate oxide medium forming method for graphene FET in graphene apparatus, involves forming metal contact graphene layer, depositing atom layer to grow boron nitride as gate oxide medium, and arranging gate electrode on gate oxide medium.

SUN Q, WANG P, WU D, ZHANG W, ZHOU P

Graphene passive Q-nanosecond impulse fiber laser for non-linear optical field, has saturable absorber graphene saturable absorber made from oxidized graphite alkene and graphite alkene polymer.

LIU J, WANG P

Graphene passive mode-locking laser has polarization controller that is connected with signal end of wavelength division multiplexer.

LIU J, WANG P

Graphene passive mode-locking optical fiber laser, has wave division multiplexing optical fiber coupler, gain and single-mode optical fibers, output coupler, circulator, and polarization controller that forms annular cavity structure.

LIU J, WANG P, XU J

Transistor i.e. FET, has leakage electrode that is in contact with semiconductor lining substrate, and source electrode that is in contact with uppermost graphene layer of overlapped layer.

WANG P, ZHANG W, LIN X, SUN Q