国家/地区 中国（7）
IPC部 H（7）
IPC大类 H01（7）
IPC小类 H01L（4） H01S（3）
IPC H01S003/067（3） H01L029/78（2） H01S003/098（2）
发明人 WANG P（7）
公开年 2011（7）
申请年 2011（5）  2010（2） 
专利权人 UNIV FUDAN（4） UNIV BEIJING.（3）

Gate oxide medium forming method for graphene FET in graphene apparatus, involves forming metal contact graphene layer, depositing atom layer to grow boron nitride as gate oxide medium, and arranging gate electrode on gate oxide medium.

SUN Q, WANG P, WU D, ZHANG W, ZHOU P

Graphene passive Q-nanosecond impulse fiber laser for non-linear optical field, has saturable absorber graphene saturable absorber made from oxidized graphite alkene and graphite alkene polymer.

LIU J, WANG P

Graphene passive mode-locking laser has polarization controller that is connected with signal end of wavelength division multiplexer.

LIU J, WANG P

Graphene passive mode-locking optical fiber laser, has wave division multiplexing optical fiber coupler, gain and single-mode optical fibers, output coupler, circulator, and polarization controller that forms annular cavity structure.

LIU J, WANG P, XU J

Transistor i.e. FET, has leakage electrode that is in contact with semiconductor lining substrate, and source electrode that is in contact with uppermost graphene layer of overlapped layer.

WANG P, ZHANG W, LIN X, SUN Q

Method for depositing high dielectric constant material on graphene surface atomic layer in manufacture of integrated circuit, involves applying electric field to cavity in which silicon substrate with graphene is placed.

WANG P, ZHANG W, JIANG T, SUN Q

Graphene transistor used in carbon based integrated circuit, has graphene layer that is isolated between second insulator layer and gate electrode through air gap.

WANG P, ZHANG W, JIANG A, JIANG T, SUN Q