国家/地区 美国（3） 中国（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L047/00（2）
发明人 WANG S（5）
公开年 2011（3） 2010（2）
申请年 2010（5）
专利权人 HEWLETTPACKA.（3） MIAO F（3） WANG S（3） WILLIAMS R S（3）
WU W（3） YANG J（3）

Graphene memristor used as switches in electronic circuits comprises two electrodes, active region interspersed between the electrodes, defective graphene structure, fast diffusing ions, and a source that generates the electric field.

MIAO F, YANG J, WU W, WANG S, WILLIAMS R S

Defective graphene-based memristor, used in nanoelectronic memories, computer logic and neuromorphic computer architectures, comprises first electrode, defective graphene structure, memristive material, second electrode and voltage source.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Memristive device used in crossbar array, has graphene (20) or graphite that is arranged between active region and bottom electrode or top electrode.

YANG J, MIAO F, WU W, WANG S, WILLIAMS R S

Preparation of graphene/titanium dioxide compound light catalyst used for, e.g. solar cell, by subjecting graphite oxide and organic solvent to ultrasonic processing, adding precursor of titanium salt and deionized water, and heating.

ZHU Y, YANG X, WANG S, JIANG X, ZHOU K

Preparing graphene oxide with high yield of fluorescent quantum, where the graphite sheets are used as the raw material that is oxidized, ultrasonically separated, modified, separated, cleaned and dried.

ZHANG Z, WANG S, MEI Q