国家/地区 中国（8）
IPC部 C（6） B（2） H（2）
IPC大类 C01（3） C08（2） C09（2）
C23（2） H01（2）
IPC小类 C01B（3） C08K（2） C08L（2）
C09K（2） C23C（2） H01L（2）
IPC C01B032/198（2） C09K005/14（2）
发明人 WEI T（8）
公开年 2021（6） 2022（2）
申请年 2021（8）
专利权人 SHENZHEN MAT.（4）

Heat-conducting graphene sheet filling hole copper-covering structure for use in electronic radiating field, has heat conducting graphene sheet whose upper and lower surfaces are uniformly coated with copper layer.

LIU Y, HUANG K, QIN F, WEI T

Microwave heat-controlled ultra-thin pavement special adhesive oil comprises emulsified modified asphalt and functional components containing microwave absorbing materials.

DU X, LU W, XIA X, LI P, WEI T, CAI G

Preparing graphene oxide by stable electrolysis, comprises immersing graphite electrode after intercalation in isolation protection solution in two-phase liquid in which barrier protection solution and electrolyte are incompatible, carrying out oxidative peeling, peeling, and cleaning.

LIU Y, WEI T, GUO J, PEI S, HUANG K

Preparing graphite alkenyl composite heat-conducting pad used as heat interface material applied to heat conducting and radiating field, involves processing graphene sheet with ordered layered structure into porous net-shaped structure.

HUANG K, WEI T

Preparing graphene oxide material used in e.g. transparent conductive film, involves using mud-shaped graphite interlayer compound as anode electrode material for electrochemical reaction, immersing in electrolyte, inserting cathode electrode, applying voltage, oxidizing, peeling and cleaning.

LIU Y, CHENG H, HUANG K, WANG J, WEI T

Preparing shape memory alloy based composite smart material used in e.g. electronic communication and civil building field comprises e.g. adding carbon black, graphene, carbon particle, carbon nanofiber or carbon nanotube to shape-memory alloy mixture powder, mixing and drying mixed material.

WEI T, ZHANG C, HU Y, SU C, YANG J

Method for manufacturing heterogeneous integrated structure of graphene device and gallium nitride device, involves forming gate region of gallium nitride device and graphene device, where gate is located on aluminum oxide layer.

CAI Q, WEI T, ZUO Y, ZHU W, MA F

Mismatched structure solar multi-junction cell comprises solar cell groups, and crystalline silicon substrate provided with bonding structure including convex columns in upper and lower surfaces.

YANG W, ZHANG X, LIU X, WEI T