国家/地区 中国（9）
IPC部 H（9） B（6） C（2）
IPC大类 H01（9） B82（5） C01（2）
IPC小类 B82Y（5） H01L（5） H01M（4）
C01B（2）
IPC H01L021/336（4） H01L029/78（4） H01L051/30（4）
H01M004/62（4） H01M010/0525（4） B82Y099/00（3）
H01L029/06（3） H01L029/16（3） H01L029/786（3）
H01L051/05（3） H01M004/139（3） B82Y030/00（2）
C01B031/02（2） C01B031/04（2） C01B032/15（2）
发明人 YANG H（9）
公开年 2012（2） 2013（2） 2014（2）
申请年 2014（3）  2011（2）  2012（2） 
专利权人 SAMSUNG ELEC.（4） TORAY IND IN.（4）

Graphene/organic solvent dispersion liquid used for manufacturing electrode, comprises graphene having preset difference between moisture content as measured by Karl Fisher method under specified conditions dispersed in organic solvent.

YANG H, TAMAKI E, KAWASAKI M, HIRAI Y, MIYAZONO K, YOSHIHIDE H

Graphene powder for manufacturing paste for forming lithium ion battery electrode, has preset specific surface area measured by BET measurement, and oxygen-to-carbon element ratio measured by X-ray photoelectron spectroscopy.

YANG H, TAMAKI E, KUBOTA Y

Multilayer graphene structure for use in graphene based magnetoresistance sensor of e.g. mobile phones, has graphene layers arranged on substrate, where charge mobility and carrier density of tuned layer are tunable by gate voltage.

KALON G, YANG H, SHIN Y J, CASTRO A H, SHEN R, CASTRO N A H, SHIN Y YU

Positive electrode active material-graphene composite particles for positive electrode material, comprises positive electrode active material, and has preset value of carbon element in material surface with respect to total material.

KAWAMURA H, KUBOTA Y, TAMAKI E, MATSUSHITA M, YANG H

Positive electrode active material-graphene composite particles used as positive electrode material of lithium-ion battery, have specified range of functionalization rate calculated by X-ray-photoelectron-spectroscopy measurement.

TAMAKI E, KUBOTA Y, KAWAMURA H, YANG H, HARA M

Electrode structure for semiconductor device e.g. FET used in electronic device, has graphene layer that is configured to contact one of semiconductor layer and electrode containing metal.

YANG H, PARK S, CHUNG H, HEO J, YANG H J, PARK S J, CHUNG H J, HEO J S, HUH J, JUNG H

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.

HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J