国家/地区 中国（10）
IPC部 G（7） C（4） H（4）
B（2）
IPC大类 G02（7） H01（4） B32（2）
IPC小类 G02F（5） B32B（2） G02B（2）
IPC G02F001/015（4） B32B009/04（2） G02B005/00（2）
G02F001/01（2）
发明人 YANG Q（10）
公开年 2016（2） 2017（2） 2022（2）
申请年 2016（4） 
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（10）

Reusing garnet substrates in single crystal epitaxial growth, comprises cleaning garnet single crystal substrate, forming double-layer graphene structure on cleaned garnet single crystal substrate, using pulsed laser deposition method to grow garnet seed crystal layer on single crystal substrate.

ZHANG H, ZHANG Y, YU J, ZHANG D, LI H, YANG Q

Preparing low-reflection graphene terahertz wave band sheet, comprises preparing oxidized graphene film, designing square Fresnel ring structure, and using laser direct writing technology to reduce the oxidation of graphene film.

ZHANG H, YANG Q, HUANG H, WU Y, LI Y, SUO Y, WEN Q

Terahertz absorbing material comprises three-layer three-dimensional graphene/polydimethylsiloxane composite material, where former layer of three-dimensional graphene/polydimethylsiloxane composite material.

WEN Q, LIANG B, HE Y, YANG Q, CHEN Z, ZHANG H

Stretchable double-sided ultra-wideband terahertz absorbing material, comprises stretchable adhesive layer, olefin foam layer and lower graphene foam layer, where upper layer of graphene foam layer provided stretchable adhesive layer.

WEN Q, WANG L, ZHANG D, LIANG B, YANG Q, CHEN Z, ZHANG H, ZHU Y

Secondary battery organic macromolecular cathode electrode material comprises multi-layer composite structure formed by alternating overlapping layers of metal phthalocyanine tetrasulfonic acid tetra-salt layer and graphene oxide sheet.

XUE W, WANG Y, YANG Q, ZHAO R

Multi-stage terahertz modulator based flexible graphene FET structure, has substrate whose lower surface is fixed on graphene film, drain electrode fixed on surface of graphene film, and gate electrode arranged on surface of ion gel layer.

WEN Q, LIU Y, HE Y, LIU H, CHEN Z, YANG Q, ZHANG H

Terahertz wave modulator based on manganese-zinc (MnZn) ferrite thin film, has P-type silicon substrate, manganese-zinc ferrite thin film and graphene layer are overlapped with source terminal, drain terminal and gate terminal.

LIAO Y, ZHANG D, WANG X, ZHANG H, YANG Q, WEN T, ZHONG Z

SOI substrate graphene transistor terahertz wave double-point selecting frequency modulator, has aluminum oxide grate medium layer and source electrode that are arranged on electrode dual-frequency point beyond material resonance structure.

CHEN Z, LIU C, LIU Y, SHEN Y, WEN Q, YIN L, YANG Q, ZHANG H, WEN T, LI J, TU X

Doped silicon composite double-layer structure terahertz modulator comprises a substrate that is provided with an insulation layer, metal-doped silicon semiconductor layer, graphene thin film and pump laser beam.

CHEN Z, LIU C, SHEN Y, WEN Q, YIN L, YANG Q, ZHANG H, LI J

Graphene FET terahertz wave adjustor, has medium layer made of aluminum oxide layer with specific thickness, and graphene thin film and source leakage and annular grate electrodes formed at back of semiconductor substrate.

CHEN Z, SHEN Y, WEN Q, TIAN W, YANG Q, ZHANG H, MAO Q