国家/地区 中国（9）
IPC部 B（4） C（4） H（4）
IPC大类 B82（4） H01（4） C01（2）
C08（2）
IPC小类 B82Y（4） H01L（4） C01B（2）
C08F（2） C08L（2）
IPC B82Y010/00（2） C01B031/04（2） H01L021/04（2）
H01L029/49（2） H01L029/78（2）
发明人 YIN J（9）
公开年 2012（9）
申请年 2011（5）  2012（4） 
专利权人 UNIV PEKING（4） UNIV NANJING.（2） UNIV SHANGHA.（2）

Preparing graphene quantum dot useful e.g. in solar cells, comprises e.g. preparing graphene sheet, preparing dispersion liquid containing graphene sheet, adhering onto filtering film, redispersing, collecting filtrate, dialyzing and drying.

CAO H, YIN J

Preparation of polymethyl methacrylate-modified graphene nano belt involves cutting multiwall carbon nanotube, adding obtained graphene nano belt into N,N-dimethylformamide, dispersing, pouring, centrifuging, separating and drying.

SHI Z, WANG J, YIN J

Graphene FET for flexible display device, has graphite alkene material with source and drain electrode that is provided with wrapping medium layer on graphene material through zinc oxide nano-meter wire.

FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Integrated circuit metal interconnection structure, has upper layer metal interconnection connected with metal through hole, and single layer or multi-layer graphene arranged on surface of upper layer metal interconnection.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Graphene strain inductive measurement and movement sensing device, has graphene film layer arranged on substrate, and main body connected to surface of measured object for measuring strain change of object by electrode of motion sensor.

CHEN Y, GUO W, YIN J, ZHOU J

Making high-quality graphene involves processing graphene substrate by reducing defect, placing precursor on substrate by transferring graphene sheet, precipitating/growing graphene with carbon tube and growing precursor into graphene strip.

GUO W, YIN J, ZHOU J

New graphene-modified polymethyl methacrylate compound used in traffic transportation, medical treatment and health, and building.

SHI Z, WANG J, WANG Y, YIN J

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J

Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H