国家/地区 中国（8）
IPC部 C（4） H（4） G（2）
IPC大类 H01（4） C23（3） C01（2）
G01（2）
IPC小类 H01L（4） C23C（3） C01B（2）
G01D（2）
IPC C23C016/26（3） H01L031/028（3） G01D005/26（2）
H01L031/0216（2） H01L031/09（2） H01L031/18（2）
发明人 ZHANG D（8）
公开年 2015（4） 2017（2） 2018（2）
申请年 2015（4）  2017（4） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（8）

Preparing graphene bionic photo detector having wavelength selectivity comprises e.g. providing a substrate, forming an electrode device on the substrate, providing graphene, transferring the graphene to the electrode device.

LI T, WANG Y, TONG J, ZHANG L, GAO A, ZHANG D, SONG H

Preparing graphene biomimetic photodetector based on temperature regulation property involves providing graphene and microheater platform, transferring graphene to microheater platform, annealing structure in chemical vapor deposition.

LI T, TONG J, WANG Y, ZHANG L, GAO A, ZHANG D, SONG H

Graphene bionic light detector based on temperature adjusting performance has micro heater platform graphene on micro heater platform, and active film formed on surface of graphene, and light receptor protein is formed on to active film.

LI T, TONG J, WANG Y, ZHANG L, GAO A, ZHANG D, SONG H

Graphene bionic light detector, has electrode device installed on substrate and provided with testing electrode, power supply lead and power supply electrode, light receptor fixed on active film, and insulating layer installed on substrate.

LI T, WANG Y, TONG J, ZHANG L, GAO A, ZHANG D, SONG H

Photoelectric detector preparing method involves forming graphene layer, and obtaining structural surface, and contacting graphene layer and thin film semiconductor layer with each other to form hetero-junction portion.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Graphene device structure contact electrode preparation method, involves structure section arranged on linear graphene edge, depositing metal covered with section structure, and one-dimensional graphene connected with metal electrode.

DENG L, HE L, JIANG M, LI L, XIE X, ZHANG D, XIE H, WANG H, CHEN L

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L