国家/地区 中国（27）
IPC部 C（13） B（8） H（7）
G（3）
IPC大类 C01（10） B01（7） H01（7）
C02（3） G01（3）
IPC小类 C01B（10） B01J（7） H01L（4）
C02F（3） G01N（3） H01B（2）
IPC C01B031/04（9） B01J023/20（2） C02F001/32（2）
G01N027/04（2） H01L021/336（2）
发明人 ZHANG D（27）
公开年 2013（27）
申请年 2013（16）  2012（11） 
专利权人 UNIV TONGJI（6） INST MICROEL.（5） UNIV LIAOCHE.（3） UNIV SHANGHA.（3）
UNIV SHANGHA.（2）

Method for testing impedance characteristic of graphene oxide solution, involves filling graphene oxide solution in conductive pool, and recording stable oscilloscope signal voltage at ends of fixed resistor and conductivity cell.

ZHANG D, PANG S

Making graphene conductive film involves depositing copper on graphite surface, growing graphene on copper surface followed by adhering heat release adhesive tape on graphite surface, and subjecting to electrochemical etching method.

JIN Z, MA P, ZHANG D, SHI J

Heterojunction silicon solar battery has junction main portion whose front surface and back surface are respectively plated with graphene film which is formed on outer end face of electrode.

DU X, LIU Y, TIAN N, YANG J, ZHANG D, ZHOU L, ZHOU Y

Graphene oxide top gate FET device parasitic resistance reducing method, involves covering gate-source, forming metal lead contact, and adjusting distance between gate-source and gate drain to reduce channel access resistance.

CHEN J, JIN Z, MA P, PENG S, ZHANG D, SHI J

Graphene conductive film preparation method, involves growing graphene on metal foil surface, and conducting reduction treatment of deposition of metal foil graphene oxide under high temperature condition of protective gas.

JIN Z, MA P, ZHANG D, SHI J

Graphene field effect transistor, has insulating layer formed on semiconductor substrate, and gate electrode located on gate dielectric layer, which is provided with graphene oxide medium layer and metal oxide dielectric layer.

JIN Z, ZHANG D, CHEN J, MA P, PENG S, SHI J

Self-aligned graphene FET, has grid metal layer formed with gate dielectric layer, and self-aligned metal layer covered on source electrode, drain electrode, conductive channel and grid metal layer.

JIN Z, ZHANG D, CHEN J, MA P, PENG S, SHI J

Preparation of graphene/hollow carbon sphere composite material for e.g. supercapacitor involves mixing phenol solution with aqueous solution of uniform polymer beads, vigorously stirring, and adding hexamethylene tetramine.

ZHANG D, YAN T, ZHANG J, SHI L, WANG H

Preparing three dimensional hierarchical structure graphene/porous carbon composite capacitive desalting electrode, comprises dispersing mono-disperse silicon dioxide into water, mixing, drying, and filtering the mixture.

ZHANG D, WEN X, YAN T, ZHANG J, SHI L

New thia molecular graphene compound for building supramolecular structure.

LEE H Y, ZHANG D, JIN W, HU Y, QIN M, YIN J