国家/地区 中国（12）
IPC部 H（7） B（5） C（3）
G（2）
IPC大类 H01（7） B82（3） B01（2）
C01（2） G01（2）
IPC小类 H01L（4） B82Y（3） B01J（2）
C01B（2） G01K（2） H01M（2）
IPC B82Y030/00（2） C01B031/04（2） H01L021/336（2）
H01M004/36（2）
发明人 ZHANG P（12）
公开年 2013（6） 2014（6）
申请年 2013（12）
专利权人 UNIV XIDIAN（5） UNIV SHANGHA.（2）

Calorimeter for graphene sheet array used for measuring electron beam energy deposition depth profile, has thermoelectric wire in which electron beam is entered into direction perpendicular to graphene sheet.

SUN J, YANG H, ZHANG P, LAI D, SU Z

Graphene far infrared ray detector for high property graphite alkenyl infrared focal plane array sensor, has graphene infrared photoelectric transistor comprising graphene quantum point comprising single or double-layer graphene thin film.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Graphene temperature sensor for use in aerospace field, has structure made of top gate electrode, alloy film, upper silicon dioxide layer, silsesquioxane, graphene layer, electrode, lower silicon dioxide layer, substrate and gate electrode.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Integrated circuit preparation method, involves growing up silicon wafer of sulfur dioxide by utilizing evaporation process, and exposing hexagonal boron nitride layer on surface of graphene containing layer by metal evaporation process.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Synthesis of copper-zinc-tin sulfide nanoparticles for composites with graphene, involves dissolving copper acetate, zinc acetate, stannous chloride, and thioacetamide in water, dripping aqueous ammonia, and hydrothermally reacting.

GAO L, SONG X, WANG J, ZHANG P

Preparation of zinc-tin-sulfur/graphene oxide composite used for semiconductor photocatalyst, involves mixing and dispersing graphene oxide, copper compound, zinc compound, tin compound and sulfur compound in carrier solution.

LI Y, LI H, ZHANG P, WANG Z, WU J, ZHOU Z, LIN Y

Method for preparing graphene and porous ferric oxide composite material, involves reacting mixed solution in kettle with graphene oxide solution and cooling followed by cleaning and drying to obtain precursor, and calcining precursor.

GAO L, SONG X, YANG S, ZHANG P

Large-size stacked structure of graphene wafer used in e.g. silicon-based semiconductor device, is provided with single crystal graphene layer, boron nitride layer, single crystal boron nitride layer and silicon dioxide wafer substrate.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Method for preparing neodymium iron-boron material, involves mixing neodymium iron boron magnetic powder and graphene powder to form mixed powder, orienting and pressing mixed powder followed by conducting sintering heat treatment.

CHEN J, HUANG X, LIU J, SHEN J, WU Y, YI X, ZHANG P

Multi-layer graphene double-grid FET for use in high frequency large power device, has transistor unit formed with multiple layers, where source and drain electrodes of transistor unit are connected together in parallel manner.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y