国家/地区 中国（8）
IPC部 H（7） C（3）
IPC大类 H01（7） C23（2）
IPC小类 H01L（7） C23C（2）
IPC H01L021/336（2） H01L029/78（2）
发明人 ZHANG W（8）
公开年 2011（8）
申请年 2011（5）  2010（3） 
专利权人 UNIV FUDAN（6） UNIV CHINA E.（2）

Method for preparing single-crystal graphene in electronic device, involves coating hydrocarbon in metal foil, implementing thermal decomposition treatment in foil, and cooling foil to room temperature to obtain graphene sheet metal.

CHEN Y, LI P, LI Y, WANG Z, ZHANG W

Gate oxide medium forming method for graphene FET in graphene apparatus, involves forming metal contact graphene layer, depositing atom layer to grow boron nitride as gate oxide medium, and arranging gate electrode on gate oxide medium.

SUN Q, WANG P, WU D, ZHANG W, ZHOU P

Method for preparing graphene FET, involves generating photoconduction effect in radiation of infrared ray by graphene channel layer.

ZHOU P, ZHANG W, WU D, SUN Q

Graphene FET for use in infrared detector for sky survey infrared detection application, has graphene channel layer generating photoconductive effect under infrared radiation and provided with multiple layers of graphite.

ZHOU P, ZHANG W, WU D, SUN Q

Transistor i.e. FET, has leakage electrode that is in contact with semiconductor lining substrate, and source electrode that is in contact with uppermost graphene layer of overlapped layer.

WANG P, ZHANG W, LIN X, SUN Q

Graphene dye sensitized solar cell, has dye sensitizing agent, and complete cell body sealed and fixed to form structure by film-like shell, where oxidation reduction electrolyte solution is added between agent and composite catalyst layer.

ZHANG W, CHENG K, LI Y, CHEN Y, WANG Z, LI P

Method for depositing high dielectric constant material on graphene surface atomic layer in manufacture of integrated circuit, involves applying electric field to cavity in which silicon substrate with graphene is placed.

WANG P, ZHANG W, JIANG T, SUN Q

Graphene transistor used in carbon based integrated circuit, has graphene layer that is isolated between second insulator layer and gate electrode through air gap.

WANG P, ZHANG W, JIANG A, JIANG T, SUN Q