国家/地区 中国（12）
IPC部 C（6） H（6）
IPC大类 H01（6） C01（4） C09（3）
IPC小类 C01B（4） H01L（3） C09K（2）
H01M（2）
IPC C01B032/184（2） C01B032/198（2） H01L033/00（2）
H01L033/12（2）
发明人 ZHOU B（12）
公开年 2019（5） 2021（4） 2020（3）
申请年 2019（12）
专利权人 HANGZHOU FUX.（5） HC SEMITEK S.（3）

Preparing photocatalytic electrode comprises adding bismuth chloride and zinc chloride into water, adding thiourea into N,N-dimethyl formamide, hydrothermally reacting and dispersing zinc bismuth sulfide/graphene oxide.

LI Y, ZHENG B, WAN F, DANG Y, SONG Z, ZHOU B, LIANG L

Battery cathode sheet used in lithium ion battery, comprises cathode current collector, first active material layer located on cathode current collector and second active material layer located on first active material layer.

ZHOU B, HAN Z, SUN X, WU N, WU K

Preparation of graphene oxide powder used in preparing graphene oxide film for graphene thermal conductive film, involves drying leftover and defective products of graphene oxide film, crushing and grinding.

ZHOU B, LU J, ZHOU R, SU K, MA D

Conductive composition for circuit structure and wearable device, includes a polymer resin, a metal powder, a conductive carbon material, and a solvent, where each metal powder includes a main portion.

ZHONG S, HUANG Q, ZHOU B, QIU Z, HUANG C

Preparing graphene loaded with nano silver involves stirring and dispersing graphene powder in solvent to obtain dispersion liquid A, adding first metal organic substance, stirring, and adsorbing to the surface of graphene.

ZHOU H, ZHOU B, ZENG X, HUANG L

Preparing graphite foam for storing and releasing heat of radiator, involves mixing slurry of graphene oxide and slurry of graphene microchips, and exhausting, drying after molding, and then subjecting to reduction reaction.

ZHOU B, ZHOU R, LU J, SU D

Graphene oxide fiber for preparing graphene oxide fiber cloth, and graphene gas diffusion membrane, comprises graphene oxide sheets, and additive comprising soluble potassium salt, soluble calcium salt or ethylenediamine.

ZHOU B, ZHOU R, LU J

Mixed slurry of strong and weak graphene oxide used in graphene thermal conductive film, comprises graphene oxide and a solvent, and the graphene oxide includes strong graphene oxide and weak graphene oxide.

ZHOU B, ZHOU R, LU J, SU D, WANG Z, LI F

Gallium nitride-based LED epitaxial wafer, has metal nanometer particle layer provided with multiple metal nano-particles that are located on graphene layer, where diameter of each metal nano-particles is in specific range.

DING T, ZHOU B, HU J, LI P

Gallium nitride-based high electron mobility transistor epitaxial wafer, comprises substrate, graphene layer, metal nanometer particle layer, three-dimensional nucleation layer, buffer layer, gallium nitride channel layer and aluminum gallium nitride barrier.

DING T, ZHOU B, HU J, LI P