国家/地区 中国（7）
IPC部 H（6） C（2）
IPC大类 H01（6）
IPC小类 H01L（6）
IPC H01L021/285（3） H01L021/02（2）
发明人 ZHOU P（7）
公开年 2014（7）
申请年 2014（7）
专利权人 UNIV FUDAN（6）

Preparing nitrogen-doped graphene comprises preparing graphene dispersion liquid, mixing the graphene dispersion liquid and nitrogen source, ultrasonically treating to obtain mixture, heating, filtering, and drying the filter cake.

ZHAO D, DAI T, SONG H, ZHOU P

Two-dimensional metal layer reduced graphene electrode contact resistance method, involves providing graphite with dilute sample, performing physical gas phase deposition process, and forming two-dimensional graphene with metal structure.

SUN Q, YANG S, ZHOU P, ZHANG W

Depositing high dielectric thin film graphene on sample specimen involves providing high dielectric medium to grow graphene on desired sample.

SHEN Y, WEI H, YANG S, ZHOU P

Method for growing island-shaped graphene sheet using high dielectric medium, involves cleaning graphene sample to remove impurity, and forming high dielectric medium thin film on sample using atom layer deposition process.

SHEN Y, WEI H, YANG S, ZHOU P

Graphene nano-wire production method involves producing source electrode, drain electrode and gate device to form graphene nano-wire device.

YANG S, ZHOU P, SHEN Y

Transferring CVD graphene device preparing method for carbon-based integrated circuit manufacturing field, involves performing substrate cleaning process, polishing substrate surface, and performing surface impurity removing process.

YANG S, ZHOU P, SHEN Y

High temperature graphene liquid metal spin coating method, involves adding dilute sample in growth medium by graphite layer, and fixing aluminum seed layer with graphene sample thin film layer by using atom layer deposition process.

SHEN Y, WEI H, YANG S, ZHOU P