国家/地区 中国（17）
IPC部 C（7） B（6） H（6）
IPC大类 H01（5） B01（4） C01（3）
C02（3） B29（2） C08（2）
IPC小类 H01L（5） B01J（4） C01B（3）
C02F（3） B29C（2） C08K（2）
IPC B01J020/30（2） B29C045/26（2） B29C045/73（2）
C02F001/28（2）
发明人 ZHOU Q（17）
公开年 2021（11） 2020（6）
申请年 2020（17）
专利权人 UNIV SHANGHA.（3） FOSHAN ZIXI .（2）

Ultra-high molecular weight polyethylene pipe comprises ultra-high molecular weight polyethylene, low molecular weight polyethylene, graphene, calcium powder compounds, hardened oil, polyethylene wax, hyperbranched poly(ester-amide), fluorosilicon masterbatch, antioxidant.

YE C, CHEN P, ZHENG Q, FENG Y, CHEN J, HOU X, LIU Q, LU G, ZHOU Q, HUO F

Fixing structure for graphene photo-catalytic net, has iron chain wound on surface of rotating rod, and weight block connected with outer end of iron chain, where first gear is engaged with second gear.

YU G, ZHANG Q, ZHOU Q, JIN S, ZHANG B, WANG C, QIAN Z

Injection mold with cooling water channel fast cooling structure, has heat conducting plate whose bottom passes through water tank and extends to lower portion of water tank whose bottom is provided with water channel connected with external water pipe.

ZHOU Q

Injection mold of constant temperature type production heating structure, has graphene heat conducting plate whose top portion is provided with through hole, and radiating fin whose right side is provided with radiating hole.

ZHOU Q

Method for manufacturing graphene high sensitivity photoelectric detector, involves adding precursor solution into reaction kettle to react to obtain dark brown product, and forming graphene film on copper foil substrate.

CHEN C, ZHOU Q, CHEN Z, LI X, HE Z

Preparation of graphene nano-narrow band by electrifying aluminum sheet as cathode and copper foil as anode into electrolytic polishing solution, drying copper foil, photoetching and patterning with graphene and hydrogen plasma etching.

CHEN C, HE Z, JIANG S, SHI F, WANG G, ZHOU Q

Modifying graphene comprises e.g. storing graphene, surface treatment agent, solvent, fusing agent and transparent substrate separately, using ultrasonic stirring device, placing graphene, adding solvent, and ultrasonically stirring.

WANG C, QIAN Z, ZHANG B, ZHANG Q, JIN S, ZHOU Q, YANG D

Method for preparing graphene-based FET, involves forming metal electrode on substrate exposing sub ion-doped region to obtain graphene-based FET, and etching silicon nitride dielectric layer and ring-shaped gate structure.

CHEN C, HE Z, ZHOU Q, WU D, JIANG S, SHI F

Electrode structure for power semiconductor chip, has radiating grooves whose surface is fixedly provided with heat radiating blocks, and electrode plates including outer side including end provided with pressing mechanism for fixing pin.

ZHENG Y, ZHOU Q, WANG Y

Graphene harmonic oscillator for phononic laser, has graphene film whose two ends are provided to cover portion of silicon dioxide layer, such that substrate chip and graphene film are provided to form optical resonant cavity.

DENG G, KANG L, CHENG Z, LI W, ZHOU Q, SONG H, WANG Y